Features of the formation of radiation spectra at (111) planar channeling of relativistic electrons in a Si crystal

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Abstract

The spectral intensity of (111) channeling radiation from electrons is numerically calculated at the energy varying from 100 to 900 MeV and different electron incidence angles relative to the (111) planes in thin Si crystals. The calculation results show that the channeling radiation's spectra have a more complicated structure, and the total channeling radiation's yield is several times larger than that at (100) or (110) channeling.

Original languageEnglish
Pages (from-to)966-970
Number of pages5
JournalJournal of Surface Investigation
Volume3
Issue number6
DOIs
Publication statusPublished - 1 Dec 2009

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Radiation
Crystals
Electrons

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

@article{a64c184680ee4aeca6d235a490d716d9,
title = "Features of the formation of radiation spectra at (111) planar channeling of relativistic electrons in a Si crystal",
abstract = "The spectral intensity of (111) channeling radiation from electrons is numerically calculated at the energy varying from 100 to 900 MeV and different electron incidence angles relative to the (111) planes in thin Si crystals. The calculation results show that the channeling radiation's spectra have a more complicated structure, and the total channeling radiation's yield is several times larger than that at (100) or (110) channeling.",
author = "Bogdanov, {O. V.} and Korotchenko, {K. B.} and Pivovarov, {Yu L.}",
year = "2009",
month = "12",
day = "1",
doi = "10.1134/S1027451009060214",
language = "English",
volume = "3",
pages = "966--970",
journal = "Journal of Surface Investigation",
issn = "1027-4510",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

TY - JOUR

T1 - Features of the formation of radiation spectra at (111) planar channeling of relativistic electrons in a Si crystal

AU - Bogdanov, O. V.

AU - Korotchenko, K. B.

AU - Pivovarov, Yu L.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The spectral intensity of (111) channeling radiation from electrons is numerically calculated at the energy varying from 100 to 900 MeV and different electron incidence angles relative to the (111) planes in thin Si crystals. The calculation results show that the channeling radiation's spectra have a more complicated structure, and the total channeling radiation's yield is several times larger than that at (100) or (110) channeling.

AB - The spectral intensity of (111) channeling radiation from electrons is numerically calculated at the energy varying from 100 to 900 MeV and different electron incidence angles relative to the (111) planes in thin Si crystals. The calculation results show that the channeling radiation's spectra have a more complicated structure, and the total channeling radiation's yield is several times larger than that at (100) or (110) channeling.

UR - http://www.scopus.com/inward/record.url?scp=72749116186&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72749116186&partnerID=8YFLogxK

U2 - 10.1134/S1027451009060214

DO - 10.1134/S1027451009060214

M3 - Article

VL - 3

SP - 966

EP - 970

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 6

ER -