Features of the formation of radiation spectra at (111) planar channeling of relativistic electrons in a Si crystal

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Abstract

The spectral intensity of (111) channeling radiation from electrons is numerically calculated at the energy varying from 100 to 900 MeV and different electron incidence angles relative to the (111) planes in thin Si crystals. The calculation results show that the channeling radiation's spectra have a more complicated structure, and the total channeling radiation's yield is several times larger than that at (100) or (110) channeling.

Original languageEnglish
Pages (from-to)966-970
Number of pages5
JournalJournal of Surface Investigation
Volume3
Issue number6
DOIs
Publication statusPublished - 1 Dec 2009

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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