Abstract
The exciton cathodoluminescence spectra of CdS(O) single crystals are investigated depending on the depth (0.3-125 μm). It is found that the CdS(O) solid solution is stable in the bulk, where the crystal lattice provides the compensation of strains due to the isoelectronic impurity OS. Near the surface (to 0.5 μm), the CdS(O) solid solution can lose oxygen when forming CdO or SO2. The stimulated radiation wavelength of the CdS(O) crystals depends on the OS concentration in the bulk, which corresponds to the data of analyses.
| Original language | English |
|---|---|
| Pages (from-to) | 1562-1567 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 46 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 1 Dec 2012 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Features of the exciton spectra of CdS(O) single crystals. / Morozova, N. K.; Danilevich, N. D.; Oleshko, V. I.; Vil'chinskaya, Svetlana Sergeevna.
In: Semiconductors, Vol. 46, No. 13, 01.12.2012, p. 1562-1567.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Features of the exciton spectra of CdS(O) single crystals
AU - Morozova, N. K.
AU - Danilevich, N. D.
AU - Oleshko, V. I.
AU - Vil'chinskaya, Svetlana Sergeevna
PY - 2012/12/1
Y1 - 2012/12/1
N2 - The exciton cathodoluminescence spectra of CdS(O) single crystals are investigated depending on the depth (0.3-125 μm). It is found that the CdS(O) solid solution is stable in the bulk, where the crystal lattice provides the compensation of strains due to the isoelectronic impurity OS. Near the surface (to 0.5 μm), the CdS(O) solid solution can lose oxygen when forming CdO or SO2. The stimulated radiation wavelength of the CdS(O) crystals depends on the OS concentration in the bulk, which corresponds to the data of analyses.
AB - The exciton cathodoluminescence spectra of CdS(O) single crystals are investigated depending on the depth (0.3-125 μm). It is found that the CdS(O) solid solution is stable in the bulk, where the crystal lattice provides the compensation of strains due to the isoelectronic impurity OS. Near the surface (to 0.5 μm), the CdS(O) solid solution can lose oxygen when forming CdO or SO2. The stimulated radiation wavelength of the CdS(O) crystals depends on the OS concentration in the bulk, which corresponds to the data of analyses.
UR - http://www.scopus.com/inward/record.url?scp=84871261204&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871261204&partnerID=8YFLogxK
U2 - 10.1134/S1063782612130143
DO - 10.1134/S1063782612130143
M3 - Article
VL - 46
SP - 1562
EP - 1567
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 13
ER -