Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam

Research output: Contribution to journalConference article

Abstract

This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.

Original languageEnglish
Article number012025
JournalJournal of Physics: Conference Series
Volume552
Issue number1
DOIs
Publication statusPublished - 1 Jan 2014
EventInternational Congress on Energy Fluxes and Radiation Effects 2014, EFRE 2014 - Tomsk, Russian Federation
Duration: 21 Sep 201426 Sep 2014

Fingerprint

ablation
ion beams
coatings
ion accelerators
silicon
silicon films
ion currents
accelerators
diodes
current density
scanning electron microscopy
protons
pulses
spectroscopy
ions
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{d84b785568df483a867ac27fe61a3479,
title = "Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam",
abstract = "This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 {\%}) and protons, the ion current density on the target is 25±5 A/cm2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.",
author = "R. Sazonov and G. Kholodnaya and Denis Vladimirovich Ponomarev and G. Remnev and I. Khailov",
year = "2014",
month = "1",
day = "1",
doi = "10.1088/1742-6596/552/1/012025",
language = "English",
volume = "552",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam

AU - Sazonov, R.

AU - Kholodnaya, G.

AU - Ponomarev, Denis Vladimirovich

AU - Remnev, G.

AU - Khailov, I.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.

AB - This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.

UR - http://www.scopus.com/inward/record.url?scp=84911374235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84911374235&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/552/1/012025

DO - 10.1088/1742-6596/552/1/012025

M3 - Conference article

AN - SCOPUS:84911374235

VL - 552

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012025

ER -