Features of microstructure of ZrN, Si3N4 and ZrN/SiNx nanoscale films irradiated by Xe ions

Abstract

The article reports on the TEM investigations of microstructure features after Xe irradiation (360 keV and 5 × 10¹⁶ cm⁻²) of ZrN, Si₃N₄ monolithic films and ZrN/SiN_x multilayered film deposited by magnetron sputtering. Results of TEM study of ZrN nanocrystalline film, irradiated by Xe ions, have shown that this film seems to be almost unaffected by the implantation. Only a small amount of damage is observed. In SiN_x amorphous film, irradiated by Xe ions, a lot of large (up to 40 nm) and small (∼5 nm) bubbles were found. The accumulation of implanted xenon (formation of large bubbles) at the depth corresponding to maximum radiation damage was revealed. In the case of multilayered film, it was found that the boundaries of crystalline ZrN-amorphous SiN_x layers close to the implantation range have been smeared in zone of the maximum energy release for implanted ions. Small bubbles can be seen in SiN_x amorphous layers while they are located in the middle of the layer.

Original language	English
Pages (from-to)	491-494
Number of pages	4
Journal	Vacuum
Volume	143
DOIs	https://doi.org/10.1016/j.vacuum.2017.03.015
Publication status	Published - 1 Sep 2017

Keywords

Ion irradiation
Magnetron sputtering
Microstructure
Multilayer
Xe bubbles

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2017.03.015

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Features of microstructure of ZrN, Si₃N₄ and ZrN/SiN_x nanoscale films irradiated by Xe ions. / Uglov, V. V.; Abadias, G.; Zlotski, S. V.; Saladukhin, I. A.; Safronov, I. V.; Shymanski, V. I.; Janse van Vuuren, A.; O'Connell, J.; Skuratov, V.; Neethling, J. H.

In: Vacuum, Vol. 143, 01.09.2017, p. 491-494.

Research output: Contribution to journal › Article › peer-review

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title = "Features of microstructure of ZrN, Si3N4 and ZrN/SiNx nanoscale films irradiated by Xe ions",

abstract = "The article reports on the TEM investigations of microstructure features after Xe irradiation (360 keV and 5 × 1016 cm−2) of ZrN, Si3N4 monolithic films and ZrN/SiNx multilayered film deposited by magnetron sputtering. Results of TEM study of ZrN nanocrystalline film, irradiated by Xe ions, have shown that this film seems to be almost unaffected by the implantation. Only a small amount of damage is observed. In SiNx amorphous film, irradiated by Xe ions, a lot of large (up to 40 nm) and small (∼5 nm) bubbles were found. The accumulation of implanted xenon (formation of large bubbles) at the depth corresponding to maximum radiation damage was revealed. In the case of multilayered film, it was found that the boundaries of crystalline ZrN-amorphous SiNx layers close to the implantation range have been smeared in zone of the maximum energy release for implanted ions. Small bubbles can be seen in SiNx amorphous layers while they are located in the middle of the layer.",

keywords = "Ion irradiation, Magnetron sputtering, Microstructure, Multilayer, Xe bubbles",

author = "Uglov, {V. V.} and G. Abadias and Zlotski, {S. V.} and Saladukhin, {I. A.} and Safronov, {I. V.} and Shymanski, {V. I.} and {Janse van Vuuren}, A. and J. O'Connell and V. Skuratov and Neethling, {J. H.}",

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doi = "10.1016/j.vacuum.2017.03.015",

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AU - Uglov, V. V.

AU - Abadias, G.

AU - Zlotski, S. V.

AU - Saladukhin, I. A.

AU - Safronov, I. V.

AU - Shymanski, V. I.

AU - Janse van Vuuren, A.

AU - O'Connell, J.

AU - Skuratov, V.

AU - Neethling, J. H.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - The article reports on the TEM investigations of microstructure features after Xe irradiation (360 keV and 5 × 1016 cm−2) of ZrN, Si3N4 monolithic films and ZrN/SiNx multilayered film deposited by magnetron sputtering. Results of TEM study of ZrN nanocrystalline film, irradiated by Xe ions, have shown that this film seems to be almost unaffected by the implantation. Only a small amount of damage is observed. In SiNx amorphous film, irradiated by Xe ions, a lot of large (up to 40 nm) and small (∼5 nm) bubbles were found. The accumulation of implanted xenon (formation of large bubbles) at the depth corresponding to maximum radiation damage was revealed. In the case of multilayered film, it was found that the boundaries of crystalline ZrN-amorphous SiNx layers close to the implantation range have been smeared in zone of the maximum energy release for implanted ions. Small bubbles can be seen in SiNx amorphous layers while they are located in the middle of the layer.

AB - The article reports on the TEM investigations of microstructure features after Xe irradiation (360 keV and 5 × 1016 cm−2) of ZrN, Si3N4 monolithic films and ZrN/SiNx multilayered film deposited by magnetron sputtering. Results of TEM study of ZrN nanocrystalline film, irradiated by Xe ions, have shown that this film seems to be almost unaffected by the implantation. Only a small amount of damage is observed. In SiNx amorphous film, irradiated by Xe ions, a lot of large (up to 40 nm) and small (∼5 nm) bubbles were found. The accumulation of implanted xenon (formation of large bubbles) at the depth corresponding to maximum radiation damage was revealed. In the case of multilayered film, it was found that the boundaries of crystalline ZrN-amorphous SiNx layers close to the implantation range have been smeared in zone of the maximum energy release for implanted ions. Small bubbles can be seen in SiNx amorphous layers while they are located in the middle of the layer.

KW - Ion irradiation

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KW - Xe bubbles

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