Features of F2 centers accumulation in oxygen-containing LiF crystals

Liudmila A. Lisitsyna, Raigul Kassymkanova, Victor M. Lisitsyn

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A mechanism for correlated formation of intrinsic defects - F 2 centers and impurity hole centers with hydrogen bond in oxygen-containing LiF crystals is suggested.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages62-67
Number of pages6
Volume880
DOIs
Publication statusPublished - 2014
Event10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013 - Tomsk, Russian Federation
Duration: 23 Apr 2013 → 26 Apr 2013

Publication series

NameAdvanced Materials Research
Volume880
ISSN (Print)10226680

Other

Other10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013
CountryRussian Federation
CityTomsk
Period23.4.13 → 26.4.13

Keywords

  • Accumulation
  • Color center
  • Electron beam
  • Impurity nanosized particles

ASJC Scopus subject areas

  • Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'Features of F<sub>2</sub> centers accumulation in oxygen-containing LiF crystals'. Together they form a unique fingerprint.

Cite this