Features of F2 centers accumulation in oxygen-containing LiF crystals

Liudmila A. Lisitsyna, Raigul Kassymkanova, Victor M. Lisitsyn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A mechanism for correlated formation of intrinsic defects - F 2 centers and impurity hole centers with hydrogen bond in oxygen-containing LiF crystals is suggested.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages62-67
Number of pages6
Volume880
DOIs
Publication statusPublished - 2014
Event10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013 - Tomsk, Russian Federation
Duration: 23 Apr 201326 Apr 2013

Publication series

NameAdvanced Materials Research
Volume880
ISSN (Print)10226680

Other

Other10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013
CountryRussian Federation
CityTomsk
Period23.4.1326.4.13

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Keywords

  • Accumulation
  • Color center
  • Electron beam
  • Impurity nanosized particles

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Lisitsyna, L. A., Kassymkanova, R., & Lisitsyn, V. M. (2014). Features of F2 centers accumulation in oxygen-containing LiF crystals. In Advanced Materials Research (Vol. 880, pp. 62-67). (Advanced Materials Research; Vol. 880). https://doi.org/10.4028/www.scientific.net/AMR.880.62