Failure modes on low voltage power MOSFETs under high temperature application

Abstract

HEV (hybrid electrical vehicle) is one of the harshest applications for standard technology of power devices and converters. High temperature capability and passive/active thermal cycle ageing must be evaluated. The authors present first results on ageing and failure modes for a 75 V/350 A MOSFET module from a low voltage/cycled DC current test bench. The module is without base plate and bond wires are used for electrical connections. For this kind of low voltage and high current module, paper shows that the principal modes of failure relate to the environment close to the chip (connections and passivations).

Original language	English
Pages (from-to)	1767-1772
Number of pages	6
Journal	Microelectronics Reliability
Volume	47
Issue number	9-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.microrel.2007.07.066
Publication status	Published - 1 Aug 2007
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.microrel.2007.07.066

Fingerprint Dive into the research topics of 'Failure modes on low voltage power MOSFETs under high temperature application'. Together they form a unique fingerprint.

Cite this

@article{b8ff21f684064bf59353bab71a045ac5,

title = "Failure modes on low voltage power MOSFETs under high temperature application",

abstract = "HEV (hybrid electrical vehicle) is one of the harshest applications for standard technology of power devices and converters. High temperature capability and passive/active thermal cycle ageing must be evaluated. The authors present first results on ageing and failure modes for a 75 V/350 A MOSFET module from a low voltage/cycled DC current test bench. The module is without base plate and bond wires are used for electrical connections. For this kind of low voltage and high current module, paper shows that the principal modes of failure relate to the environment close to the chip (connections and passivations).",

author = "L. Dupont and S. Lefebvre and M. Bouaroudj and Z. Khatir and Faugi{\`e}res, {J. C.}",

year = "2007",

month = aug,

day = "1",

doi = "10.1016/j.microrel.2007.07.066",

language = "English",

volume = "47",

pages = "1767--1772",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "9-11 SPEC. ISS.",

}

TY - JOUR

T1 - Failure modes on low voltage power MOSFETs under high temperature application

AU - Dupont, L.

AU - Lefebvre, S.

AU - Bouaroudj, M.

AU - Khatir, Z.

AU - Faugières, J. C.

PY - 2007/8/1

Y1 - 2007/8/1

N2 - HEV (hybrid electrical vehicle) is one of the harshest applications for standard technology of power devices and converters. High temperature capability and passive/active thermal cycle ageing must be evaluated. The authors present first results on ageing and failure modes for a 75 V/350 A MOSFET module from a low voltage/cycled DC current test bench. The module is without base plate and bond wires are used for electrical connections. For this kind of low voltage and high current module, paper shows that the principal modes of failure relate to the environment close to the chip (connections and passivations).

AB - HEV (hybrid electrical vehicle) is one of the harshest applications for standard technology of power devices and converters. High temperature capability and passive/active thermal cycle ageing must be evaluated. The authors present first results on ageing and failure modes for a 75 V/350 A MOSFET module from a low voltage/cycled DC current test bench. The module is without base plate and bond wires are used for electrical connections. For this kind of low voltage and high current module, paper shows that the principal modes of failure relate to the environment close to the chip (connections and passivations).

UR - http://www.scopus.com/inward/record.url?scp=34548711305&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548711305&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2007.07.066

DO - 10.1016/j.microrel.2007.07.066

M3 - Article

AN - SCOPUS:34548711305

VL - 47

SP - 1767

EP - 1772

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 9-11 SPEC. ISS.

ER -

Failure modes on low voltage power MOSFETs under high temperature application

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this