Experiments with plasma opening switch on SNOP-3 generator

V. M. Bystritskii, Y. A. Glushko, G. A. Mesyats, Y. E. Krasik, V. K. Petin, N. A. Ratakhin, A. A. Sinebrjukhov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. Experiments with a POS (plasma opening switch) operating in the nanosecond regime applied to a 0.5-TW accelerator have been conducted with different loads (electron or ion diodes, inductive load). The accelerator parameters in negative pulse polarity were 0.7 MV, O.7-Ω impedance, and 60-ns pulse duration. The POS with a 90% transparent squirrel cage and 160-mm-diameter anode used a flashboard plasma source installed at a diameter of 320 mm, having four sections with three rows each of spark gaps. The plasma ion flow density provided 150 A/cm2 with 10-15-cm/μs velocity. With an inductive load of 15 nH the voltage enhancement reached a factor of 2, the POS impedance being 15 Ω. With the electron diode the voltage amplitude equaled 1.5 MV, with a switched current of up to 600 kA and a load pulse duration (measured by the p-i-n diode) of 20-30 ns. Ion beam generation was realized in the pinch-reflex diode with a passive plasma source on the anode.

Original languageEnglish
Title of host publicationIEEE Conference Record - Abstracts
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages147
Number of pages1
Publication statusPublished - 1990
Externally publishedYes
Event1990 IEEE International Conference on Plasma Science - Oakland, CA, USA
Duration: 21 May 199023 May 1990

Other

Other1990 IEEE International Conference on Plasma Science
CityOakland, CA, USA
Period21.5.9023.5.90

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bystritskii, V. M., Glushko, Y. A., Mesyats, G. A., Krasik, Y. E., Petin, V. K., Ratakhin, N. A., & Sinebrjukhov, A. A. (1990). Experiments with plasma opening switch on SNOP-3 generator. In IEEE Conference Record - Abstracts (pp. 147). Piscataway, NJ, United States: Publ by IEEE.