Abstract
Summary form only given. Experiments with a POS (plasma opening switch) operating in the nanosecond regime applied to a 0.5-TW accelerator have been conducted with different loads (electron or ion diodes, inductive load). The accelerator parameters in negative pulse polarity were 0.7 MV, O.7-Ω impedance, and 60-ns pulse duration. The POS with a 90% transparent squirrel cage and 160-mm-diameter anode used a flashboard plasma source installed at a diameter of 320 mm, having four sections with three rows each of spark gaps. The plasma ion flow density provided 150 A/cm2 with 10-15-cm/μs velocity. With an inductive load of 15 nH the voltage enhancement reached a factor of 2, the POS impedance being 15 Ω. With the electron diode the voltage amplitude equaled 1.5 MV, with a switched current of up to 600 kA and a load pulse duration (measured by the p-i-n diode) of 20-30 ns. Ion beam generation was realized in the pinch-reflex diode with a passive plasma source on the anode.
| Original language | English |
|---|---|
| Title of host publication | IEEE Conference Record - Abstracts |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | Publ by IEEE |
| Pages | 147 |
| Number of pages | 1 |
| Publication status | Published - 1990 |
| Externally published | Yes |
| Event | 1990 IEEE International Conference on Plasma Science - Oakland, CA, USA Duration: 21 May 1990 → 23 May 1990 |
Other
| Other | 1990 IEEE International Conference on Plasma Science |
|---|---|
| City | Oakland, CA, USA |
| Period | 21.5.90 → 23.5.90 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Experiments with plasma opening switch on SNOP-3 generator. / Bystritskii, V. M.; Glushko, Y. A.; Mesyats, G. A.; Krasik, Y. E.; Petin, V. K.; Ratakhin, N. A.; Sinebrjukhov, A. A.
IEEE Conference Record - Abstracts. Piscataway, NJ, United States : Publ by IEEE, 1990. p. 147.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Experiments with plasma opening switch on SNOP-3 generator
AU - Bystritskii, V. M.
AU - Glushko, Y. A.
AU - Mesyats, G. A.
AU - Krasik, Y. E.
AU - Petin, V. K.
AU - Ratakhin, N. A.
AU - Sinebrjukhov, A. A.
PY - 1990
Y1 - 1990
N2 - Summary form only given. Experiments with a POS (plasma opening switch) operating in the nanosecond regime applied to a 0.5-TW accelerator have been conducted with different loads (electron or ion diodes, inductive load). The accelerator parameters in negative pulse polarity were 0.7 MV, O.7-Ω impedance, and 60-ns pulse duration. The POS with a 90% transparent squirrel cage and 160-mm-diameter anode used a flashboard plasma source installed at a diameter of 320 mm, having four sections with three rows each of spark gaps. The plasma ion flow density provided 150 A/cm2 with 10-15-cm/μs velocity. With an inductive load of 15 nH the voltage enhancement reached a factor of 2, the POS impedance being 15 Ω. With the electron diode the voltage amplitude equaled 1.5 MV, with a switched current of up to 600 kA and a load pulse duration (measured by the p-i-n diode) of 20-30 ns. Ion beam generation was realized in the pinch-reflex diode with a passive plasma source on the anode.
AB - Summary form only given. Experiments with a POS (plasma opening switch) operating in the nanosecond regime applied to a 0.5-TW accelerator have been conducted with different loads (electron or ion diodes, inductive load). The accelerator parameters in negative pulse polarity were 0.7 MV, O.7-Ω impedance, and 60-ns pulse duration. The POS with a 90% transparent squirrel cage and 160-mm-diameter anode used a flashboard plasma source installed at a diameter of 320 mm, having four sections with three rows each of spark gaps. The plasma ion flow density provided 150 A/cm2 with 10-15-cm/μs velocity. With an inductive load of 15 nH the voltage enhancement reached a factor of 2, the POS impedance being 15 Ω. With the electron diode the voltage amplitude equaled 1.5 MV, with a switched current of up to 600 kA and a load pulse duration (measured by the p-i-n diode) of 20-30 ns. Ion beam generation was realized in the pinch-reflex diode with a passive plasma source on the anode.
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M3 - Conference contribution
SP - 147
BT - IEEE Conference Record - Abstracts
PB - Publ by IEEE
CY - Piscataway, NJ, United States
ER -