Experiments with nanosecond Plasma Opening Switch at the 1 MA current level

Abstract

The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.

Original language	English
Title of host publication	1990 8th International Conference on High-Power Particle Beams, BEAMS 1990
Pages	1017-1021
Number of pages	5
Publication status	Published - 1990
Externally published	Yes
Event	1990 8th International Conference on High-Power Particle Beams, BEAMS 1990 - Novosibirsk, Russian Federation Duration: 2 Jul 1990 → 5 Jul 1990

Other

Other	1990 8th International Conference on High-Power Particle Beams, BEAMS 1990
Country	Russian Federation
City	Novosibirsk
Period	2.7.90 → 5.7.90

ASJC Scopus subject areas

Nuclear and High Energy Physics

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Experiments with nanosecond Plasma Opening Switch at the 1 MA current level. / Bystritskii, V. M.; Glushko, Yu A.; Mesyats, G. A.; Krasik, Ya E.; Luchfnskii, A. V.; Petin, V. K.; Ratakhin, N. A.; Sinebrjukhov, A. A.

1990 8th International Conference on High-Power Particle Beams, BEAMS 1990. 1990. p. 1017-1021 6396394.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bystritskii, VM, Glushko, YA, Mesyats, GA, Krasik, YE, Luchfnskii, AV, Petin, VK, Ratakhin, NA & Sinebrjukhov, AA 1990, Experiments with nanosecond Plasma Opening Switch at the 1 MA current level. in 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990., 6396394, pp. 1017-1021, 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990, Novosibirsk, Russian Federation, 2.7.90.

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abstract = "The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.",

author = "Bystritskii, {V. M.} and Glushko, {Yu A.} and Mesyats, {G. A.} and Krasik, {Ya E.} and Luchfnskii, {A. V.} and Petin, {V. K.} and Ratakhin, {N. A.} and Sinebrjukhov, {A. A.}",

year = "1990",

language = "English",

isbn = "9789810205454",

pages = "1017--1021",

booktitle = "1990 8th International Conference on High-Power Particle Beams, BEAMS 1990",

note = "1990 8th International Conference on High-Power Particle Beams, BEAMS 1990 ; Conference date: 02-07-1990 Through 05-07-1990",

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AU - Bystritskii, V. M.

AU - Glushko, Yu A.

AU - Mesyats, G. A.

AU - Krasik, Ya E.

AU - Luchfnskii, A. V.

AU - Petin, V. K.

AU - Ratakhin, N. A.

AU - Sinebrjukhov, A. A.

PY - 1990

Y1 - 1990

N2 - The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.

AB - The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.

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