Abstract
The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.
| Original language | English |
|---|---|
| Title of host publication | 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990 |
| Pages | 1017-1021 |
| Number of pages | 5 |
| Publication status | Published - 1990 |
| Externally published | Yes |
| Event | 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990 - Novosibirsk, Russian Federation Duration: 2 Jul 1990 → 5 Jul 1990 |
Other
| Other | 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990 |
|---|---|
| Country | Russian Federation |
| City | Novosibirsk |
| Period | 2.7.90 → 5.7.90 |
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ASJC Scopus subject areas
- Nuclear and High Energy Physics
Cite this
Experiments with nanosecond Plasma Opening Switch at the 1 MA current level. / Bystritskii, V. M.; Glushko, Yu A.; Mesyats, G. A.; Krasik, Ya E.; Luchfnskii, A. V.; Petin, V. K.; Ratakhin, N. A.; Sinebrjukhov, A. A.
1990 8th International Conference on High-Power Particle Beams, BEAMS 1990. 1990. p. 1017-1021 6396394.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Experiments with nanosecond Plasma Opening Switch at the 1 MA current level
AU - Bystritskii, V. M.
AU - Glushko, Yu A.
AU - Mesyats, G. A.
AU - Krasik, Ya E.
AU - Luchfnskii, A. V.
AU - Petin, V. K.
AU - Ratakhin, N. A.
AU - Sinebrjukhov, A. A.
PY - 1990
Y1 - 1990
N2 - The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.
AB - The investigation of the nanosecond Plasma Opening Switch (POS) operation with two type of load - short circuited and planar electron diode - was made. With the stored current of 600 kA 450 kA was switched in load inductivity of 15 nH with rise time 5 ns; POS voltage reached 1.3 MV and its impedance - 15 Ohm. With the electron diode load the unefficient turn-on of the diode cathode surface took place: we stored in this case the current of 800 kA through the switch, but the maximum diode current was not more than 300 kA. The duration of the current pulse in the diode measured by pin-hole was equal to 20-30 ns.
UR - http://www.scopus.com/inward/record.url?scp=84874081298&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874081298&partnerID=8YFLogxK
M3 - Conference contribution
SN - 9789810205454
SP - 1017
EP - 1021
BT - 1990 8th International Conference on High-Power Particle Beams, BEAMS 1990
ER -