Experimental search of parametric X-ray radiation in a silicon crystal at a small angle near the velocity direction of relativistic electrons

B. N. Kalinin, G. A. Naumenko, D. V. Padalko, A. P. Potylitsyn, I. E. Vnukov

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

At the Tomsk synchrotron measurements of X-ray yield for the energies ω = 29-53 keV emitted in the forward direction from a perfect silicon crystal bombarded by 500-MeV relativistic electrons have been carried out. The contribution of parametric X-ray radiation (PXR) at a small angle near the velocity direction of electrons has not been observed. The possible maximum value of this radiation is smaller than 2% of the total intensity of bremsstrahlung and transition radiation.

Original languageEnglish
Pages (from-to)253-261
Number of pages9
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume173
Issue number1
DOIs
Publication statusPublished - 1 Jan 2001

Fingerprint

Radiation
X rays
Silicon
Crystals
Electrons
silicon
radiation
crystals
electrons
x rays
Synchrotrons
bremsstrahlung
synchrotrons
energy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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AU - Kalinin, B. N.

AU - Naumenko, G. A.

AU - Padalko, D. V.

AU - Potylitsyn, A. P.

AU - Vnukov, I. E.

PY - 2001/1/1

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AB - At the Tomsk synchrotron measurements of X-ray yield for the energies ω = 29-53 keV emitted in the forward direction from a perfect silicon crystal bombarded by 500-MeV relativistic electrons have been carried out. The contribution of parametric X-ray radiation (PXR) at a small angle near the velocity direction of electrons has not been observed. The possible maximum value of this radiation is smaller than 2% of the total intensity of bremsstrahlung and transition radiation.

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