Abstract
This paper presents the behavior of single-chip insulated gate bipolar transistors (IGBT) devices under repetitive short-circuit operations. The 600 and 1200 V nonpunch through IGBTs as well as 600 V COOLMOS (trademark of Infineon Technologies) have been tested. The repetition of these severe working conditions is responsible for devices ageing, and results unavoidably in the components failure. A series of experimental tests were made in order to determine the number of short-circuit operations the devices can support before failure for different dissipated energies. The temperature influence has been also investigated. Results show two distinct failure modes depending on the dissipated energy during the tests. A critical value of short-circuit energy has been pointed out which separates these failure modes. Experimental and numerical investigations have been carried out in order to analyze these failure modes. A detailed analysis of the physical mechanisms occurring during the short-circuit failures for dissipated energies equal or lightly higher than the critical value is presented.
| Original language | English |
|---|---|
| Pages (from-to) | 276-283 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 52 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Feb 2005 |
| Externally published | Yes |
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Keywords
- COOLMOS
- Insulated gate bipolar transistors (IGBT)
- Power devices
- Reliability
- Short-circuit
- Thermal modeling
- Thermal runaway
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions. / Lefebvre, Stephane; Khatir, Zoubir; Saint-Eve, Frederic.
In: IEEE Transactions on Electron Devices, Vol. 52, No. 2, 01.02.2005, p. 276-283.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions
AU - Lefebvre, Stephane
AU - Khatir, Zoubir
AU - Saint-Eve, Frederic
PY - 2005/2/1
Y1 - 2005/2/1
N2 - This paper presents the behavior of single-chip insulated gate bipolar transistors (IGBT) devices under repetitive short-circuit operations. The 600 and 1200 V nonpunch through IGBTs as well as 600 V COOLMOS (trademark of Infineon Technologies) have been tested. The repetition of these severe working conditions is responsible for devices ageing, and results unavoidably in the components failure. A series of experimental tests were made in order to determine the number of short-circuit operations the devices can support before failure for different dissipated energies. The temperature influence has been also investigated. Results show two distinct failure modes depending on the dissipated energy during the tests. A critical value of short-circuit energy has been pointed out which separates these failure modes. Experimental and numerical investigations have been carried out in order to analyze these failure modes. A detailed analysis of the physical mechanisms occurring during the short-circuit failures for dissipated energies equal or lightly higher than the critical value is presented.
AB - This paper presents the behavior of single-chip insulated gate bipolar transistors (IGBT) devices under repetitive short-circuit operations. The 600 and 1200 V nonpunch through IGBTs as well as 600 V COOLMOS (trademark of Infineon Technologies) have been tested. The repetition of these severe working conditions is responsible for devices ageing, and results unavoidably in the components failure. A series of experimental tests were made in order to determine the number of short-circuit operations the devices can support before failure for different dissipated energies. The temperature influence has been also investigated. Results show two distinct failure modes depending on the dissipated energy during the tests. A critical value of short-circuit energy has been pointed out which separates these failure modes. Experimental and numerical investigations have been carried out in order to analyze these failure modes. A detailed analysis of the physical mechanisms occurring during the short-circuit failures for dissipated energies equal or lightly higher than the critical value is presented.
KW - COOLMOS
KW - Insulated gate bipolar transistors (IGBT)
KW - Power devices
KW - Reliability
KW - Short-circuit
KW - Thermal modeling
KW - Thermal runaway
UR - http://www.scopus.com/inward/record.url?scp=13444267421&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=13444267421&partnerID=8YFLogxK
U2 - 10.1109/TED.2004.842714
DO - 10.1109/TED.2004.842714
M3 - Article
VL - 52
SP - 276
EP - 283
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 2
ER -