Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions

Stephane Lefebvre, Zoubir Khatir, Frederic Saint-Eve

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

This paper presents the behavior of single-chip insulated gate bipolar transistors (IGBT) devices under repetitive short-circuit operations. The 600 and 1200 V nonpunch through IGBTs as well as 600 V COOLMOS (trademark of Infineon Technologies) have been tested. The repetition of these severe working conditions is responsible for devices ageing, and results unavoidably in the components failure. A series of experimental tests were made in order to determine the number of short-circuit operations the devices can support before failure for different dissipated energies. The temperature influence has been also investigated. Results show two distinct failure modes depending on the dissipated energy during the tests. A critical value of short-circuit energy has been pointed out which separates these failure modes. Experimental and numerical investigations have been carried out in order to analyze these failure modes. A detailed analysis of the physical mechanisms occurring during the short-circuit failures for dissipated energies equal or lightly higher than the critical value is presented.

Original languageEnglish
Pages (from-to)276-283
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume52
Issue number2
DOIs
Publication statusPublished - 1 Feb 2005
Externally publishedYes

Fingerprint

Insulated gate bipolar transistors (IGBT)
Short circuit currents
Failure modes
Trademarks
Aging of materials
Temperature

Keywords

  • COOLMOS
  • Insulated gate bipolar transistors (IGBT)
  • Power devices
  • Reliability
  • Short-circuit
  • Thermal modeling
  • Thermal runaway

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions. / Lefebvre, Stephane; Khatir, Zoubir; Saint-Eve, Frederic.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 2, 01.02.2005, p. 276-283.

Research output: Contribution to journalArticle

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