Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

Z. Khatir, S. Lefebvre, F. Saint-Eve

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

This paper presents experimental and numerical investigations on the delayed failure mode of IGBT devices observed under short-circuit operations. For short-circuit energies lightly higher than a critical value, the default current may be successfully turned-off but a leakage current takes place leading to a thermal runaway and finally to a delayed failure. Numerical investigations have been carried out and a detailed analysis of the physical mechanisms occurring during the delayed failure mode is presented. We show that the classical short-circuit failure mode (energy limited) is a limit case of the delayed failure mode with zero delay time to failure. So, the analysis is extended to the energy limited case and give better understanding of the failure process of this last failure mode. An electro-thermal model including the device and the solder layer is presented as well as all leakage current components models like saturation, thermal and avalanche generation currents. A detailed description of the thermal runaway is given and main parameters influence on critical energy value are presented, especially, case temperature and solder layer thickness. Finally, numerical results allow to show that the critical energy which separates two failure modes corresponds to a threshold temperature of about 650 °C in the vicinity of the junction location which seems to be independent of test conditions.

Original languageEnglish
Pages (from-to)422-428
Number of pages7
JournalMicroelectronics Reliability
Volume47
Issue number2-3
DOIs
Publication statusPublished - 1 Feb 2007
Externally publishedYes

Fingerprint

Insulated gate bipolar transistors (IGBT)
failure modes
short circuits
Short circuit currents
Failure modes
chips
solders
Leakage currents
Soldering alloys
leakage
energy
avalanches
Time delay
time lag
saturation
Temperature
thresholds
temperature
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. / Khatir, Z.; Lefebvre, S.; Saint-Eve, F.

In: Microelectronics Reliability, Vol. 47, No. 2-3, 01.02.2007, p. 422-428.

Research output: Contribution to journalArticle

@article{958e33b50d844a98a2a585bd8faee8b8,
title = "Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices",
abstract = "This paper presents experimental and numerical investigations on the delayed failure mode of IGBT devices observed under short-circuit operations. For short-circuit energies lightly higher than a critical value, the default current may be successfully turned-off but a leakage current takes place leading to a thermal runaway and finally to a delayed failure. Numerical investigations have been carried out and a detailed analysis of the physical mechanisms occurring during the delayed failure mode is presented. We show that the classical short-circuit failure mode (energy limited) is a limit case of the delayed failure mode with zero delay time to failure. So, the analysis is extended to the energy limited case and give better understanding of the failure process of this last failure mode. An electro-thermal model including the device and the solder layer is presented as well as all leakage current components models like saturation, thermal and avalanche generation currents. A detailed description of the thermal runaway is given and main parameters influence on critical energy value are presented, especially, case temperature and solder layer thickness. Finally, numerical results allow to show that the critical energy which separates two failure modes corresponds to a threshold temperature of about 650 °C in the vicinity of the junction location which seems to be independent of test conditions.",
author = "Z. Khatir and S. Lefebvre and F. Saint-Eve",
year = "2007",
month = "2",
day = "1",
doi = "10.1016/j.microrel.2006.05.004",
language = "English",
volume = "47",
pages = "422--428",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "2-3",

}

TY - JOUR

T1 - Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices

AU - Khatir, Z.

AU - Lefebvre, S.

AU - Saint-Eve, F.

PY - 2007/2/1

Y1 - 2007/2/1

N2 - This paper presents experimental and numerical investigations on the delayed failure mode of IGBT devices observed under short-circuit operations. For short-circuit energies lightly higher than a critical value, the default current may be successfully turned-off but a leakage current takes place leading to a thermal runaway and finally to a delayed failure. Numerical investigations have been carried out and a detailed analysis of the physical mechanisms occurring during the delayed failure mode is presented. We show that the classical short-circuit failure mode (energy limited) is a limit case of the delayed failure mode with zero delay time to failure. So, the analysis is extended to the energy limited case and give better understanding of the failure process of this last failure mode. An electro-thermal model including the device and the solder layer is presented as well as all leakage current components models like saturation, thermal and avalanche generation currents. A detailed description of the thermal runaway is given and main parameters influence on critical energy value are presented, especially, case temperature and solder layer thickness. Finally, numerical results allow to show that the critical energy which separates two failure modes corresponds to a threshold temperature of about 650 °C in the vicinity of the junction location which seems to be independent of test conditions.

AB - This paper presents experimental and numerical investigations on the delayed failure mode of IGBT devices observed under short-circuit operations. For short-circuit energies lightly higher than a critical value, the default current may be successfully turned-off but a leakage current takes place leading to a thermal runaway and finally to a delayed failure. Numerical investigations have been carried out and a detailed analysis of the physical mechanisms occurring during the delayed failure mode is presented. We show that the classical short-circuit failure mode (energy limited) is a limit case of the delayed failure mode with zero delay time to failure. So, the analysis is extended to the energy limited case and give better understanding of the failure process of this last failure mode. An electro-thermal model including the device and the solder layer is presented as well as all leakage current components models like saturation, thermal and avalanche generation currents. A detailed description of the thermal runaway is given and main parameters influence on critical energy value are presented, especially, case temperature and solder layer thickness. Finally, numerical results allow to show that the critical energy which separates two failure modes corresponds to a threshold temperature of about 650 °C in the vicinity of the junction location which seems to be independent of test conditions.

UR - http://www.scopus.com/inward/record.url?scp=33846627797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846627797&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2006.05.004

DO - 10.1016/j.microrel.2006.05.004

M3 - Article

VL - 47

SP - 422

EP - 428

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 2-3

ER -