Abstract
This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.
| Original language | English |
|---|---|
| Pages (from-to) | 1512-1516 |
| Number of pages | 5 |
| Journal | Microelectronics Reliability |
| Volume | 55 |
| Issue number | 9-10 |
| DOIs | |
| Publication status | Published - 1 Aug 2015 |
| Externally published | Yes |
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Keywords
- Gamma irradiation
- Si-IGBT
- SiC-JFET
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. / Tala-Ighil, B.; Trolet, J. L.; Gualous, H.; Mary, P.; Lefebvre, S.
In: Microelectronics Reliability, Vol. 55, No. 9-10, 01.08.2015, p. 1512-1516.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET
AU - Tala-Ighil, B.
AU - Trolet, J. L.
AU - Gualous, H.
AU - Mary, P.
AU - Lefebvre, S.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.
AB - This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.
KW - Gamma irradiation
KW - Si-IGBT
KW - SiC-JFET
UR - http://www.scopus.com/inward/record.url?scp=84943456734&partnerID=8YFLogxK
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U2 - 10.1016/j.microrel.2015.06.136
DO - 10.1016/j.microrel.2015.06.136
M3 - Article
VL - 55
SP - 1512
EP - 1516
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 9-10
ER -