Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

Abstract

This paper deals with an experimental study and a comparative study of the effects of total ionising dose of ⁶⁰Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.

Original language	English
Pages (from-to)	1512-1516
Number of pages	5
Journal	Microelectronics Reliability
Volume	55
Issue number	9-10
DOIs	https://doi.org/10.1016/j.microrel.2015.06.136
Publication status	Published - 1 Aug 2015
Externally published	Yes

Keywords

Gamma irradiation
Si-IGBT
SiC-JFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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Tala-Ighil, B., Trolet, J. L., Gualous, H., Mary, P., & Lefebvre, S. (2015). Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. Microelectronics Reliability, 55(9-10), 1512-1516. https://doi.org/10.1016/j.microrel.2015.06.136

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title = "Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET",

abstract = "This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.",

keywords = "Gamma irradiation, Si-IGBT, SiC-JFET",

author = "B. Tala-Ighil and Trolet, {J. L.} and H. Gualous and P. Mary and S. Lefebvre",

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AU - Tala-Ighil, B.

AU - Trolet, J. L.

AU - Gualous, H.

AU - Mary, P.

AU - Lefebvre, S.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.

AB - This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.

KW - Gamma irradiation

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KW - SiC-JFET

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