Abstract
This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.
| Original language | English |
|---|---|
| Pages (from-to) | 1512-1516 |
| Number of pages | 5 |
| Journal | Microelectronics Reliability |
| Volume | 55 |
| Issue number | 9-10 |
| DOIs | |
| Publication status | Published - 1 Aug 2015 |
| Externally published | Yes |
Keywords
- Gamma irradiation
- Si-IGBT
- SiC-JFET
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering