Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET

B. Tala-Ighil, J. L. Trolet, H. Gualous, P. Mary, S. Lefebvre

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for both devices. Charge trapping in the gate oxide causes the decrease of the threshold voltage for Si-IGBT. The decrease of this parameter combined with the behaviour of Miller plateau during irradiation results in a decrease of the collector current rise-time, the collector-emitter voltage fall-time, and the turn-on switching energy and in an increase of the peak of the turn-on switching power and of the turn-on overshoot collector current. No changes in these parameters are observed for SiC-JFETs up to 2900 Gy with a dose rate of 2.80 Gy/h. This indicates that those SiC-JFETs have extremely high radiation resistance with respect to the TID effects compared to the Si-IGBTs.

Original languageEnglish
Pages (from-to)1512-1516
Number of pages5
JournalMicroelectronics Reliability
Volume55
Issue number9-10
DOIs
Publication statusPublished - 1 Aug 2015
Externally publishedYes

Fingerprint

Junction gate field effect transistors
JFET
Radiation effects
Insulated gate bipolar transistors (IGBT)
radiation effects
Gamma rays
accumulators
gamma rays
Threshold voltage
threshold voltage
traveling ionospheric disturbances
dosage
Charge trapping
radiation tolerance
Oxides
Dosimetry
plateaus
emitters
trapping
Irradiation

Keywords

  • Gamma irradiation
  • Si-IGBT
  • SiC-JFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. / Tala-Ighil, B.; Trolet, J. L.; Gualous, H.; Mary, P.; Lefebvre, S.

In: Microelectronics Reliability, Vol. 55, No. 9-10, 01.08.2015, p. 1512-1516.

Research output: Contribution to journalArticle

Tala-Ighil, B. ; Trolet, J. L. ; Gualous, H. ; Mary, P. ; Lefebvre, S. / Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. In: Microelectronics Reliability. 2015 ; Vol. 55, No. 9-10. pp. 1512-1516.
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