Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction

Philipp Schroth, Martin Köhl, Jean Wolfgang Hornung, Emmanouil Dimakis, Claudio Somaschini, Lutz Geelhaar, Andreas Biermanns, Sondes Bauer, Sergey Lazarev, Ullrich Pietsch, Tilo Baumbach

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

In III-V nanowires the energetic barriers for nucleation in the zinc blende or wurtzite arrangement are typically of a similar order of magnitude. As a result, both arrangements can occur in a single wire. Here, we investigate the evolution of this polytypism in self-catalyzed GaAs nanowires on Si(111) grown by molecular beam epitaxy with time-resolved in situ x-ray diffraction. We interpret our data in the framework of a height dependent Markov model for the stacking in the nanowires. In this way, we extract the mean sizes of faultless wurtzite and zinc blende segments - a key parameter of polytypic nanowires - and their temporal evolution during growth. Thereby, we infer quantitative information on the differences of the nucleation barriers including their evolution without requiring a model of the nucleus.

Original languageEnglish
Article number055504
JournalPhysical Review Letters
Volume114
Issue number5
DOIs
Publication statusPublished - 5 Feb 2015
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Schroth, P., Köhl, M., Hornung, J. W., Dimakis, E., Somaschini, C., Geelhaar, L., Biermanns, A., Bauer, S., Lazarev, S., Pietsch, U., & Baumbach, T. (2015). Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction. Physical Review Letters, 114(5), [055504]. https://doi.org/10.1103/PhysRevLett.114.055504