Estimation of the losses in Si and SiC power modules for automotive applications

This paper compares 1200V-120A Silicon Carbide (SiC) MOSFET module with 1200 and 650V-100A Silicon (Si) IGBT module performances in different converter topologies (2 and 3 level inverters) and it focuses on the prediction and the study of the veracity of a losses model (both conduction and switching losses) in Si IGBT and SiC MOSFET power modules used for electric vehicle applications. It shows a test case based on an experimental estimation of the losses with a double pulse test circuit. The behavioral model used to estimate losses in a wide range of operating conditions is only linked to the knowledge of the IGBT, MOSFET and diode characteristics obtained from datasheets. Then, it is compared with experimental measurements. Several studies have already been made on the estimation of the losses in Si and SiC power modules [1, 2]. This paper focuses on the study of the influence of the DC bus voltage on the switching losses for Si and SiC devices and all the other switching conditions: temperature, load current, gate resistance, but also the inductance of the power loop.