Abstract
This paper compares 1200V-120A Silicon Carbide (SiC) MOSFET module with 1200 and 650V-100A Silicon (Si) IGBT module performances in different converter topologies (2 and 3 level inverters) and it focuses on the prediction and the study of the veracity of a losses model (both conduction and switching losses) in Si IGBT and SiC MOSFET power modules used for electric vehicle applications. It shows a test case based on an experimental estimation of the losses with a double pulse test circuit. The behavioral model used to estimate losses in a wide range of operating conditions is only linked to the knowledge of the IGBT, MOSFET and diode characteristics obtained from datasheets. Then, it is compared with experimental measurements. Several studies have already been made on the estimation of the losses in Si and SiC power modules [1, 2]. This paper focuses on the study of the influence of the DC bus voltage on the switching losses for Si and SiC devices and all the other switching conditions: temperature, load current, gate resistance, but also the inductance of the power loop.
| Original language | English |
|---|---|
| Title of host publication | PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9783800744244 |
| DOIs | |
| Publication status | Published - 1 Jan 2017 |
| Externally published | Yes |
| Event | 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 - Nuremberg, Germany Duration: 16 May 2017 → 18 May 2017 |
Publication series
| Name | PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
|---|
Conference
| Conference | 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 |
|---|---|
| Country | Germany |
| City | Nuremberg |
| Period | 16.5.17 → 18.5.17 |
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ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Control and Optimization
- Artificial Intelligence
Cite this
Estimation of the losses in Si and SiC power modules for automotive applications. / Oustad, Dounia; Lefebvre, Stéphane; Petit, Mickaël; Ameziani, Menouar; Lhotellier, Dominique.
PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 2017. 7990929 (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Estimation of the losses in Si and SiC power modules for automotive applications
AU - Oustad, Dounia
AU - Lefebvre, Stéphane
AU - Petit, Mickaël
AU - Ameziani, Menouar
AU - Lhotellier, Dominique
PY - 2017/1/1
Y1 - 2017/1/1
N2 - This paper compares 1200V-120A Silicon Carbide (SiC) MOSFET module with 1200 and 650V-100A Silicon (Si) IGBT module performances in different converter topologies (2 and 3 level inverters) and it focuses on the prediction and the study of the veracity of a losses model (both conduction and switching losses) in Si IGBT and SiC MOSFET power modules used for electric vehicle applications. It shows a test case based on an experimental estimation of the losses with a double pulse test circuit. The behavioral model used to estimate losses in a wide range of operating conditions is only linked to the knowledge of the IGBT, MOSFET and diode characteristics obtained from datasheets. Then, it is compared with experimental measurements. Several studies have already been made on the estimation of the losses in Si and SiC power modules [1, 2]. This paper focuses on the study of the influence of the DC bus voltage on the switching losses for Si and SiC devices and all the other switching conditions: temperature, load current, gate resistance, but also the inductance of the power loop.
AB - This paper compares 1200V-120A Silicon Carbide (SiC) MOSFET module with 1200 and 650V-100A Silicon (Si) IGBT module performances in different converter topologies (2 and 3 level inverters) and it focuses on the prediction and the study of the veracity of a losses model (both conduction and switching losses) in Si IGBT and SiC MOSFET power modules used for electric vehicle applications. It shows a test case based on an experimental estimation of the losses with a double pulse test circuit. The behavioral model used to estimate losses in a wide range of operating conditions is only linked to the knowledge of the IGBT, MOSFET and diode characteristics obtained from datasheets. Then, it is compared with experimental measurements. Several studies have already been made on the estimation of the losses in Si and SiC power modules [1, 2]. This paper focuses on the study of the influence of the DC bus voltage on the switching losses for Si and SiC devices and all the other switching conditions: temperature, load current, gate resistance, but also the inductance of the power loop.
UR - http://www.scopus.com/inward/record.url?scp=85040560985&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85040560985&partnerID=8YFLogxK
U2 - 10.1109/SBMicro.2017.7990929
DO - 10.1109/SBMicro.2017.7990929
M3 - Conference contribution
AN - SCOPUS:85040560985
T3 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
BT - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
PB - Institute of Electrical and Electronics Engineers Inc.
ER -