Estimation of SiC JFET temperature during short-circuit operations

Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean Claude Faugières, Peter Friedrichs, Ali Haddouche

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Original language	English
Pages (from-to)	1358-1362
Number of pages	5
Journal	Microelectronics Reliability
Volume	49
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2009.06.024
Publication status	Published - 1 Sep 2009
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2009.06.024

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abstract = "This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).",

author = "Mounira Berkani and St{\'e}phane Lefebvre and Narjes Boughrara and Zoubir Khatir and Faugi{\`e}res, {Jean Claude} and Peter Friedrichs and Ali Haddouche",

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T1 - Estimation of SiC JFET temperature during short-circuit operations

AU - Berkani, Mounira

AU - Lefebvre, Stéphane

AU - Boughrara, Narjes

AU - Khatir, Zoubir

AU - Faugières, Jean Claude

AU - Friedrichs, Peter

AU - Haddouche, Ali

PY - 2009/9/1

Y1 - 2009/9/1

N2 - This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

AB - This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

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EP - 1362

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 9-11

ER -

Estimation of SiC JFET temperature during short-circuit operations

Abstract

ASJC Scopus subject areas

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