Abstract
This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).
Original language | English |
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Pages (from-to) | 1358-1362 |
Number of pages | 5 |
Journal | Microelectronics Reliability |
Volume | 49 |
Issue number | 9-11 |
DOIs | |
Publication status | Published - 1 Sep 2009 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering