Estimation of SiC JFET temperature during short-circuit operations

Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean Claude Faugières, Peter Friedrichs, Ali Haddouche

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

This paper presents results showing the robustness of different SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current which is used as a thermal indicator. This work shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Original languageEnglish
Pages (from-to)1358-1362
Number of pages5
JournalMicroelectronics Reliability
Volume49
Issue number9-11
DOIs
Publication statusPublished - 1 Sep 2009
Externally publishedYes

Fingerprint

Junction gate field effect transistors
JFET
short circuits
Short circuit currents
Transistors
Insulated gate bipolar transistors (IGBT)
transistors
Temperature
Crystals
temperature
saturation
crystals
Hot Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Berkani, M., Lefebvre, S., Boughrara, N., Khatir, Z., Faugières, J. C., Friedrichs, P., & Haddouche, A. (2009). Estimation of SiC JFET temperature during short-circuit operations. Microelectronics Reliability, 49(9-11), 1358-1362. https://doi.org/10.1016/j.microrel.2009.06.024

Estimation of SiC JFET temperature during short-circuit operations. / Berkani, Mounira; Lefebvre, Stéphane; Boughrara, Narjes; Khatir, Zoubir; Faugières, Jean Claude; Friedrichs, Peter; Haddouche, Ali.

In: Microelectronics Reliability, Vol. 49, No. 9-11, 01.09.2009, p. 1358-1362.

Research output: Contribution to journal › Article

Berkani, M, Lefebvre, S, Boughrara, N, Khatir, Z, Faugières, JC, Friedrichs, P & Haddouche, A 2009, 'Estimation of SiC JFET temperature during short-circuit operations', Microelectronics Reliability, vol. 49, no. 9-11, pp. 1358-1362. https://doi.org/10.1016/j.microrel.2009.06.024
Berkani M, Lefebvre S, Boughrara N, Khatir Z, Faugières JC, Friedrichs P et al. Estimation of SiC JFET temperature during short-circuit operations. Microelectronics Reliability. 2009 Sep 1;49(9-11):1358-1362. https://doi.org/10.1016/j.microrel.2009.06.024
Berkani, Mounira ; Lefebvre, Stéphane ; Boughrara, Narjes ; Khatir, Zoubir ; Faugières, Jean Claude ; Friedrichs, Peter ; Haddouche, Ali. / Estimation of SiC JFET temperature during short-circuit operations. In: Microelectronics Reliability. 2009 ; Vol. 49, No. 9-11. pp. 1358-1362.
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