Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

F. Boige, F. Richardeau, S. Lefebvre, J. M. Blaquière, G. Guibaud, A. Bourennane

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

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Physics & Astronomy

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