Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

F. Boige, F. Richardeau, S. Lefebvre, J. M. Blaquière, G. Guibaud, A. Bourennane

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The purpose of this paper is to present a complete experimentation of the two failure modes in competition that can appear during short-circuit (SC) fault operation of single-chip 1,2 kV SiC MOSFETs from different manufacturers including planar and trench-gate structures, well-known or recent devices. Ruggedness and selective failure modes are identified in relation with the power density dissipated by the chip and the simulated 1D-thermal junction. Finally, the chips of the devices which failed in a “fail-to-open” mode have been studied in order to find the physical reasons of this original and unusual fail-safe mode.

Original languageEnglish
Pages (from-to)598-603
Number of pages6
JournalMicroelectronics Reliability
Volume88-90
DOIs
Publication statusPublished - 1 Sep 2018
Externally publishedYes

Fingerprint

short circuits
MOSFET devices
Short circuit currents
Failure modes
field effect transistors
failure modes
chips
ruggedness
experimentation
radiant flux density
Power MOSFET
Hot Temperature

Keywords

  • Failure analysis
  • Failure mode
  • Power MOSFET
  • Reliability
  • Short-circuit
  • Silicon Carbide (SiC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. / Boige, F.; Richardeau, F.; Lefebvre, S.; Blaquière, J. M.; Guibaud, G.; Bourennane, A.

In: Microelectronics Reliability, Vol. 88-90, 01.09.2018, p. 598-603.

Research output: Contribution to journalArticle

Boige, F. ; Richardeau, F. ; Lefebvre, S. ; Blaquière, J. M. ; Guibaud, G. ; Bourennane, A. / Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. In: Microelectronics Reliability. 2018 ; Vol. 88-90. pp. 598-603.
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