Enhanced type-B coherent effect in collimated electron-positron ada from Si crystal

Y. Okazaki, M. Andreyashkin, K. Chouffani, I. Endo, R. Hamatsu, M. Iinuma, H. Kojima, Yu P. Kunashenko, M. Masuyama, T. Ohnishi, H. Okuno, Yu L. Pivovarov, T. Takahashi, Y. Takashima

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Abstract

The relative cross section of pair creation from a silicon single crystal has been measured with a bremsstrahlung beam from 350 MeV electrons. A clear enhancement was observed above 230 MeV as expected from the theory based on the type-B coherent effect. (C) 2000 Elsevier Science B.V.

Original languageEnglish
Pages (from-to)110-114
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume271
Issue number1-2
DOIs
Publication statusPublished - 19 Jun 2000

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Okazaki, Y., Andreyashkin, M., Chouffani, K., Endo, I., Hamatsu, R., Iinuma, M., ... Takashima, Y. (2000). Enhanced type-B coherent effect in collimated electron-positron ada from Si crystal. Physics Letters, Section A: General, Atomic and Solid State Physics, 271(1-2), 110-114. https://doi.org/10.1016/S0375-9601(00)00342-X