Energetic states in the boron nitride band gap

V. V. Lopatin, F. V. Konusov

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Energetic and kinetic characteristics of charge carrier trapping and recombination centres in graphite-like Pyrolytic Boron Nitride (PBN) produced by gas-phase deposition are discussed. Local levels in X-ray excited PBN are studied using thermally activated spectroscopy of luminescence and conduction, and their positions in the band gap are determined from the temperature dependences of the diffusive current. Acceptor and donor level models for different PBN are developed. Their influence on conduction and on luminescence is determined. A scheme for electron-hole and hole-electron transitions by luminescence is suggested. The influence of carbon on the nature of the defects creating local levels is discussed. Comparatively shallow donor (1.3 and 1.1 eV) and acceptor (1.2 and 1.15 eV) levels are caused by the defects: nitrogen vacancies (VN), boron vacancies (VB), and carbon stabilized vacancies, respectively. Deep levels may be created by intercalation carbon compounds.

Original languageEnglish
Pages (from-to)847-854
Number of pages8
JournalJournal of Physics and Chemistry of Solids
Volume53
Issue number6
DOIs
Publication statusPublished - 1992

Keywords

  • carbon impurity
  • conduction
  • local centres
  • Luminescence
  • pyrolytic boron nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Energetic states in the boron nitride band gap'. Together they form a unique fingerprint.

  • Cite this