Abstract
Energetic and kinetic characteristics of charge carrier trapping and recombination centres in graphite-like Pyrolytic Boron Nitride (PBN) produced by gas-phase deposition are discussed. Local levels in X-ray excited PBN are studied using thermally activated spectroscopy of luminescence and conduction, and their positions in the band gap are determined from the temperature dependences of the diffusive current. Acceptor and donor level models for different PBN are developed. Their influence on conduction and on luminescence is determined. A scheme for electron-hole and hole-electron transitions by luminescence is suggested. The influence of carbon on the nature of the defects creating local levels is discussed. Comparatively shallow donor (1.3 and 1.1 eV) and acceptor (1.2 and 1.15 eV) levels are caused by the defects: nitrogen vacancies (VN), boron vacancies (VB), and carbon stabilized vacancies, respectively. Deep levels may be created by intercalation carbon compounds.
| Original language | English |
|---|---|
| Pages (from-to) | 847-854 |
| Number of pages | 8 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 53 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1992 |
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Keywords
- carbon impurity
- conduction
- local centres
- Luminescence
- pyrolytic boron nitride
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Energetic states in the boron nitride band gap. / Lopatin, V. V.; Konusov, F. V.
In: Journal of Physics and Chemistry of Solids, Vol. 53, No. 6, 1992, p. 847-854.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Energetic states in the boron nitride band gap
AU - Lopatin, V. V.
AU - Konusov, F. V.
PY - 1992
Y1 - 1992
N2 - Energetic and kinetic characteristics of charge carrier trapping and recombination centres in graphite-like Pyrolytic Boron Nitride (PBN) produced by gas-phase deposition are discussed. Local levels in X-ray excited PBN are studied using thermally activated spectroscopy of luminescence and conduction, and their positions in the band gap are determined from the temperature dependences of the diffusive current. Acceptor and donor level models for different PBN are developed. Their influence on conduction and on luminescence is determined. A scheme for electron-hole and hole-electron transitions by luminescence is suggested. The influence of carbon on the nature of the defects creating local levels is discussed. Comparatively shallow donor (1.3 and 1.1 eV) and acceptor (1.2 and 1.15 eV) levels are caused by the defects: nitrogen vacancies (VN), boron vacancies (VB), and carbon stabilized vacancies, respectively. Deep levels may be created by intercalation carbon compounds.
AB - Energetic and kinetic characteristics of charge carrier trapping and recombination centres in graphite-like Pyrolytic Boron Nitride (PBN) produced by gas-phase deposition are discussed. Local levels in X-ray excited PBN are studied using thermally activated spectroscopy of luminescence and conduction, and their positions in the band gap are determined from the temperature dependences of the diffusive current. Acceptor and donor level models for different PBN are developed. Their influence on conduction and on luminescence is determined. A scheme for electron-hole and hole-electron transitions by luminescence is suggested. The influence of carbon on the nature of the defects creating local levels is discussed. Comparatively shallow donor (1.3 and 1.1 eV) and acceptor (1.2 and 1.15 eV) levels are caused by the defects: nitrogen vacancies (VN), boron vacancies (VB), and carbon stabilized vacancies, respectively. Deep levels may be created by intercalation carbon compounds.
KW - carbon impurity
KW - conduction
KW - local centres
KW - Luminescence
KW - pyrolytic boron nitride
UR - http://www.scopus.com/inward/record.url?scp=0026882808&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026882808&partnerID=8YFLogxK
U2 - 10.1016/0022-3697(92)90199-N
DO - 10.1016/0022-3697(92)90199-N
M3 - Article
AN - SCOPUS:0026882808
VL - 53
SP - 847
EP - 854
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 6
ER -