Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene

Pavel Trayon, Juriy Sakharov, Serge Gyngazov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.

Original languageEnglish
Title of host publicationTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
PublisherIEEE Computer Society
Pages186-187
Number of pages2
Volume2005
ISBN (Print)0780383974, 9780780383975
DOIs
Publication statusPublished - 2005
EventTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom
Duration: 10 Jul 2005 → 14 Jul 2005

Other

OtherTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
CountryUnited Kingdom
CityOxford
Period10.7.05 → 14.7.05

ASJC Scopus subject areas

  • Engineering(all)

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    Trayon, P., Sakharov, J., & Gyngazov, S. (2005). Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 (Vol. 2005, pp. 186-187). [1619548] IEEE Computer Society. https://doi.org/10.1109/IVNC.2005.1619548