Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene

Pavel Trayon, Juriy Sakharov, Serge Gyngazov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.

Original languageEnglish
Title of host publicationTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
PublisherIEEE Computer Society
Pages186-187
Number of pages2
Volume2005
ISBN (Print)0780383974, 9780780383975
DOIs
Publication statusPublished - 2005
EventTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom
Duration: 10 Jul 200514 Jul 2005

Other

OtherTechnical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
CountryUnited Kingdom
CityOxford
Period10.7.0514.7.05

Fingerprint

Polypropylenes
Electrons
Metals
Flat panel displays
Microelectronics
Semiconductor materials
Thin films

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Trayon, P., Sakharov, J., & Gyngazov, S. (2005). Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 (Vol. 2005, pp. 186-187). [1619548] IEEE Computer Society. https://doi.org/10.1109/IVNC.2005.1619548

Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. / Trayon, Pavel; Sakharov, Juriy; Gyngazov, Serge.

Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Vol. 2005 IEEE Computer Society, 2005. p. 186-187 1619548.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Trayon, P, Sakharov, J & Gyngazov, S 2005, Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. in Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. vol. 2005, 1619548, IEEE Computer Society, pp. 186-187, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, Oxford, United Kingdom, 10.7.05. https://doi.org/10.1109/IVNC.2005.1619548
Trayon P, Sakharov J, Gyngazov S. Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Vol. 2005. IEEE Computer Society. 2005. p. 186-187. 1619548 https://doi.org/10.1109/IVNC.2005.1619548
Trayon, Pavel ; Sakharov, Juriy ; Gyngazov, Serge. / Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Vol. 2005 IEEE Computer Society, 2005. pp. 186-187
@inproceedings{ec1134c8e1e04386b209909755d09b0b,
title = "Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene",
abstract = "The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.",
author = "Pavel Trayon and Juriy Sakharov and Serge Gyngazov",
year = "2005",
doi = "10.1109/IVNC.2005.1619548",
language = "English",
isbn = "0780383974",
volume = "2005",
pages = "186--187",
booktitle = "Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005",
publisher = "IEEE Computer Society",

}

TY - GEN

T1 - Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene

AU - Trayon, Pavel

AU - Sakharov, Juriy

AU - Gyngazov, Serge

PY - 2005

Y1 - 2005

N2 - The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.

AB - The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.

UR - http://www.scopus.com/inward/record.url?scp=33947235591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947235591&partnerID=8YFLogxK

U2 - 10.1109/IVNC.2005.1619548

DO - 10.1109/IVNC.2005.1619548

M3 - Conference contribution

SN - 0780383974

SN - 9780780383975

VL - 2005

SP - 186

EP - 187

BT - Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005

PB - IEEE Computer Society

ER -