Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene

Abstract

The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.

Original language	English
Title of host publication	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Publisher	IEEE Computer Society
Pages	186-187
Number of pages	2
Volume	2005
ISBN (Print)	0780383974, 9780780383975
DOIs	https://doi.org/10.1109/IVNC.2005.1619548
Publication status	Published - 2005
Event	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom Duration: 10 Jul 2005 → 14 Jul 2005

Other

Other	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Country	United Kingdom
City	Oxford
Period	10.7.05 → 14.7.05

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/IVNC.2005.1619548

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Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. / Trayon, Pavel; Sakharov, Juriy; Gyngazov, Serge.

Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Vol. 2005 IEEE Computer Society, 2005. p. 186-187 1619548.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Trayon, P, Sakharov, J & Gyngazov, S 2005, Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. in Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. vol. 2005, 1619548, IEEE Computer Society, pp. 186-187, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, Oxford, United Kingdom, 10.7.05. https://doi.org/10.1109/IVNC.2005.1619548

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abstract = "The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.",

author = "Pavel Trayon and Juriy Sakharov and Serge Gyngazov",

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