Abstract
The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 |
| Publisher | IEEE Computer Society |
| Pages | 186-187 |
| Number of pages | 2 |
| Volume | 2005 |
| ISBN (Print) | 0780383974, 9780780383975 |
| DOIs | |
| Publication status | Published - 2005 |
| Event | Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom Duration: 10 Jul 2005 → 14 Jul 2005 |
Other
| Other | Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 |
|---|---|
| Country | United Kingdom |
| City | Oxford |
| Period | 10.7.05 → 14.7.05 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene. / Trayon, Pavel; Sakharov, Juriy; Gyngazov, Serge.
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. Vol. 2005 IEEE Computer Society, 2005. p. 186-187 1619548.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Emission of electrons from formed MIM structure Mo-SiO2-Al with a layer of polypropylene
AU - Trayon, Pavel
AU - Sakharov, Juriy
AU - Gyngazov, Serge
PY - 2005
Y1 - 2005
N2 - The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.
AB - The structures of metal - insulator - metal (MIM) and metal - insulator -semiconductor (MIS) are widely applied in various devices of microelectronics. The thin-film structures, subject to process of electrical forming, are widely investigated in connection with an opportunity of their use in flat panel displays as a source of electrons.
UR - http://www.scopus.com/inward/record.url?scp=33947235591&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33947235591&partnerID=8YFLogxK
U2 - 10.1109/IVNC.2005.1619548
DO - 10.1109/IVNC.2005.1619548
M3 - Conference contribution
AN - SCOPUS:33947235591
SN - 0780383974
SN - 9780780383975
VL - 2005
SP - 186
EP - 187
BT - Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
PB - IEEE Computer Society
ER -