Abstract
The article reports on the elimination of arcing in the DC pulse reactive sputtering of Al2O3 thin films using a single unbalanced magnetron operating at relatively high target power density Wta ranging from ∼10 to ∼50 W/cm2; Wta is the target power density averaged over the pulse length. Correlations between pulse length Ï, pulse-off time toff, repetition frequency fr and arcing at the target surface were investigated in detail. Undesirable damage of sputtered alumina film due to arcing is demonstrated. It is shown that the length of pulse-off time toff is of key importance for elimination of arcing in pulse reactive sputtering of electrically insulating compounds using a single magnetron. Reactive magnetron sputtering is a very useful technique for preparation of Al2O3 films. However, to produce a good quality film the arcing at the target surface must be eliminated. Our investigation shows that transient phenomena connected with the pulse switch-off are important in the elimination of arcing. It is shown that Al 2O3 films with smooth surface can be reactively sputtered also at low frequency, high duty cycle and relatively high target power density.
| Original language | English |
|---|---|
| Pages (from-to) | 500-504 |
| Number of pages | 5 |
| Journal | Plasma Processes and Polymers |
| Volume | 8 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 22 Jun 2011 |
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Keywords
- alumina thin films
- arcing elimination
- DC pulse reactive sputtering
- single magnetron
ASJC Scopus subject areas
- Condensed Matter Physics
- Polymers and Plastics
Cite this
Elimination of arcing in reactive sputtering of Al2O3 thin films prepared by DC pulse single magnetron. / Meissner, Michal; Tolg, Tomas; Baroch, Pavel; Musil, Jindrich.
In: Plasma Processes and Polymers, Vol. 8, No. 6, 22.06.2011, p. 500-504.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Elimination of arcing in reactive sputtering of Al2O3 thin films prepared by DC pulse single magnetron
AU - Meissner, Michal
AU - Tolg, Tomas
AU - Baroch, Pavel
AU - Musil, Jindrich
PY - 2011/6/22
Y1 - 2011/6/22
N2 - The article reports on the elimination of arcing in the DC pulse reactive sputtering of Al2O3 thin films using a single unbalanced magnetron operating at relatively high target power density Wta ranging from ∼10 to ∼50 W/cm2; Wta is the target power density averaged over the pulse length. Correlations between pulse length Ï, pulse-off time toff, repetition frequency fr and arcing at the target surface were investigated in detail. Undesirable damage of sputtered alumina film due to arcing is demonstrated. It is shown that the length of pulse-off time toff is of key importance for elimination of arcing in pulse reactive sputtering of electrically insulating compounds using a single magnetron. Reactive magnetron sputtering is a very useful technique for preparation of Al2O3 films. However, to produce a good quality film the arcing at the target surface must be eliminated. Our investigation shows that transient phenomena connected with the pulse switch-off are important in the elimination of arcing. It is shown that Al 2O3 films with smooth surface can be reactively sputtered also at low frequency, high duty cycle and relatively high target power density.
AB - The article reports on the elimination of arcing in the DC pulse reactive sputtering of Al2O3 thin films using a single unbalanced magnetron operating at relatively high target power density Wta ranging from ∼10 to ∼50 W/cm2; Wta is the target power density averaged over the pulse length. Correlations between pulse length Ï, pulse-off time toff, repetition frequency fr and arcing at the target surface were investigated in detail. Undesirable damage of sputtered alumina film due to arcing is demonstrated. It is shown that the length of pulse-off time toff is of key importance for elimination of arcing in pulse reactive sputtering of electrically insulating compounds using a single magnetron. Reactive magnetron sputtering is a very useful technique for preparation of Al2O3 films. However, to produce a good quality film the arcing at the target surface must be eliminated. Our investigation shows that transient phenomena connected with the pulse switch-off are important in the elimination of arcing. It is shown that Al 2O3 films with smooth surface can be reactively sputtered also at low frequency, high duty cycle and relatively high target power density.
KW - alumina thin films
KW - arcing elimination
KW - DC pulse reactive sputtering
KW - single magnetron
UR - http://www.scopus.com/inward/record.url?scp=79959698698&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959698698&partnerID=8YFLogxK
U2 - 10.1002/ppap.201000208
DO - 10.1002/ppap.201000208
M3 - Article
AN - SCOPUS:79959698698
VL - 8
SP - 500
EP - 504
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
SN - 1612-8850
IS - 6
ER -