Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices

P. I. Lazarenko, S. A. Kozyukhin, A. A. Sherchenkov, A. V. Babich, S. P. Timoshenkov, D. G. Gromov, A. V. Zabolotskaya, V. V. Kozik

    Research output: Contribution to journalArticle

    Abstract

    In this work, we studied temperature dependences of the resistivity and current-voltage characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of compositions GeSb4Te7 (GST147), GeSb2Te4 (GST124), and Ge2Sb2Te5 (GST225) applied in the phase change memory devices. The effect of changes in the composition of thin films on the crystallization temperature, resistivity of films in amorphous and crystalline states, and on the activation energy of conductivity is determined. It is found that the peculiarity of these materials is the mechanism of two-channel conductivity where the contribution to the conductivity is made by charge carriers excited into localized states in the band tails and by carriers of the delocalized states in the valence band.

    Original languageEnglish
    Pages (from-to)1-8
    Number of pages8
    JournalRussian Physics Journal
    Volume59
    Issue number9
    DOIs
    Publication statusAccepted/In press - 11 Jan 2017

    Keywords

    • current-voltage characteristics
    • energy diagram
    • GST124
    • GST147
    • GST225
    • phase change memory
    • temperature dependences of the resistivity

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Lazarenko, P. I., Kozyukhin, S. A., Sherchenkov, A. A., Babich, A. V., Timoshenkov, S. P., Gromov, D. G., Zabolotskaya, A. V., & Kozik, V. V. (Accepted/In press). Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices. Russian Physics Journal, 59(9), 1-8. https://doi.org/10.1007/s11182-017-0925-x