Electronic transport through a contact of a correlated quantum wire with leads of higher dimension

S. N. Artemenko, P. P. Aseev, D. S. Shapiro

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We study theoretically electronic transport through a contact of a quantum wire with 2D or 3D leads and find that if the contact is not smooth and adiabatic then the conduction is strongly suppressed below a threshold voltage VT, while above VT the dc current Ī is accompanied by coherent oscillations of frequency f = Ī/e. The effect is related to interelectronic repulsion and interaction of dc current with the Friedel oscillations near a sharp contact. In short conducting channels of length L < L0 ≅ ℏVF/eVT and at high temperatures T > T0 ≅ eVT/kB the effect is destroyed by fluctuations.

Original languageEnglish
Pages (from-to)589-593
Number of pages5
JournalJETP Letters
Volume91
Issue number11
DOIs
Publication statusPublished - 11 Aug 2010

Fingerprint

quantum wires
conduction
oscillations
electronics
threshold voltage
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electronic transport through a contact of a correlated quantum wire with leads of higher dimension. / Artemenko, S. N.; Aseev, P. P.; Shapiro, D. S.

In: JETP Letters, Vol. 91, No. 11, 11.08.2010, p. 589-593.

Research output: Contribution to journalArticle

@article{e9331217756d4c9593231ef32b5e5cc4,
title = "Electronic transport through a contact of a correlated quantum wire with leads of higher dimension",
abstract = "We study theoretically electronic transport through a contact of a quantum wire with 2D or 3D leads and find that if the contact is not smooth and adiabatic then the conduction is strongly suppressed below a threshold voltage VT, while above VT the dc current Ī is accompanied by coherent oscillations of frequency f = Ī/e. The effect is related to interelectronic repulsion and interaction of dc current with the Friedel oscillations near a sharp contact. In short conducting channels of length L < L0 ≅ ℏVF/eVT and at high temperatures T > T0 ≅ eVT/kB the effect is destroyed by fluctuations.",
author = "Artemenko, {S. N.} and Aseev, {P. P.} and Shapiro, {D. S.}",
year = "2010",
month = "8",
day = "11",
doi = "10.1134/S002136401011010X",
language = "English",
volume = "91",
pages = "589--593",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "11",

}

TY - JOUR

T1 - Electronic transport through a contact of a correlated quantum wire with leads of higher dimension

AU - Artemenko, S. N.

AU - Aseev, P. P.

AU - Shapiro, D. S.

PY - 2010/8/11

Y1 - 2010/8/11

N2 - We study theoretically electronic transport through a contact of a quantum wire with 2D or 3D leads and find that if the contact is not smooth and adiabatic then the conduction is strongly suppressed below a threshold voltage VT, while above VT the dc current Ī is accompanied by coherent oscillations of frequency f = Ī/e. The effect is related to interelectronic repulsion and interaction of dc current with the Friedel oscillations near a sharp contact. In short conducting channels of length L < L0 ≅ ℏVF/eVT and at high temperatures T > T0 ≅ eVT/kB the effect is destroyed by fluctuations.

AB - We study theoretically electronic transport through a contact of a quantum wire with 2D or 3D leads and find that if the contact is not smooth and adiabatic then the conduction is strongly suppressed below a threshold voltage VT, while above VT the dc current Ī is accompanied by coherent oscillations of frequency f = Ī/e. The effect is related to interelectronic repulsion and interaction of dc current with the Friedel oscillations near a sharp contact. In short conducting channels of length L < L0 ≅ ℏVF/eVT and at high temperatures T > T0 ≅ eVT/kB the effect is destroyed by fluctuations.

UR - http://www.scopus.com/inward/record.url?scp=77955291799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955291799&partnerID=8YFLogxK

U2 - 10.1134/S002136401011010X

DO - 10.1134/S002136401011010X

M3 - Article

AN - SCOPUS:77955291799

VL - 91

SP - 589

EP - 593

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 11

ER -