Abstract
We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.
| Original language | English |
|---|---|
| Article number | 045134 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 92 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 31 Jul 2015 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Electronic and spin structure of a family of Sn-based ternary topological insulators. / Vergniory, M. G.; Menshchikova, T. V.; Silkin, I. V.; Koroteev, Yu M.; Eremeev, S. V.; Chulkov, E. V.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 92, No. 4, 045134, 31.07.2015.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Electronic and spin structure of a family of Sn-based ternary topological insulators
AU - Vergniory, M. G.
AU - Menshchikova, T. V.
AU - Silkin, I. V.
AU - Koroteev, Yu M.
AU - Eremeev, S. V.
AU - Chulkov, E. V.
PY - 2015/7/31
Y1 - 2015/7/31
N2 - We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.
AB - We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.
UR - http://www.scopus.com/inward/record.url?scp=84938925204&partnerID=8YFLogxK
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U2 - 10.1103/PhysRevB.92.045134
DO - 10.1103/PhysRevB.92.045134
M3 - Article
VL - 92
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 4
M1 - 045134
ER -