Electronic and spin structure of a family of Sn-based ternary topological insulators

M. G. Vergniory, T. V. Menshchikova, I. V. Silkin, Yu M. Koroteev, S. V. Eremeev, E. V. Chulkov

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13 Citations (Scopus)


We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.

Original languageEnglish
Article number045134
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
Publication statusPublished - 31 Jul 2015
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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