Electronic and spin structure of a family of Sn-based ternary topological insulators

M. G. Vergniory, T. V. Menshchikova, I. V. Silkin, Yu M. Koroteev, S. V. Eremeev, E. V. Chulkov

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.

Original languageEnglish
Article number045134
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number4
DOIs
Publication statusPublished - 31 Jul 2015
Externally publishedYes

Fingerprint

Spin polarization
insulators
electronic structure
polarization
Magnetoelectronics
Stoichiometry
Electronic properties
electron spin
Density functional theory
cleavage
stoichiometry
Energy gap
density functional theory
Electrons
electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Vergniory, M. G., Menshchikova, T. V., Silkin, I. V., Koroteev, Y. M., Eremeev, S. V., & Chulkov, E. V. (2015). Electronic and spin structure of a family of Sn-based ternary topological insulators. Physical Review B - Condensed Matter and Materials Physics, 92(4), [045134]. https://doi.org/10.1103/PhysRevB.92.045134

Electronic and spin structure of a family of Sn-based ternary topological insulators. / Vergniory, M. G.; Menshchikova, T. V.; Silkin, I. V.; Koroteev, Yu M.; Eremeev, S. V.; Chulkov, E. V.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 92, No. 4, 045134, 31.07.2015.

Research output: Contribution to journalArticle

Vergniory, M. G. ; Menshchikova, T. V. ; Silkin, I. V. ; Koroteev, Yu M. ; Eremeev, S. V. ; Chulkov, E. V. / Electronic and spin structure of a family of Sn-based ternary topological insulators. In: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Vol. 92, No. 4.
@article{e2f29a5ec87d41508537fcee5ededd64,
title = "Electronic and spin structure of a family of Sn-based ternary topological insulators",
abstract = "We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85{\%} in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.",
author = "Vergniory, {M. G.} and Menshchikova, {T. V.} and Silkin, {I. V.} and Koroteev, {Yu M.} and Eremeev, {S. V.} and Chulkov, {E. V.}",
year = "2015",
month = "7",
day = "31",
doi = "10.1103/PhysRevB.92.045134",
language = "English",
volume = "92",
journal = "Physical Review B",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Electronic and spin structure of a family of Sn-based ternary topological insulators

AU - Vergniory, M. G.

AU - Menshchikova, T. V.

AU - Silkin, I. V.

AU - Koroteev, Yu M.

AU - Eremeev, S. V.

AU - Chulkov, E. V.

PY - 2015/7/31

Y1 - 2015/7/31

N2 - We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.

AB - We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.

UR - http://www.scopus.com/inward/record.url?scp=84938925204&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938925204&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.92.045134

DO - 10.1103/PhysRevB.92.045134

M3 - Article

VL - 92

JO - Physical Review B

JF - Physical Review B

SN - 0163-1829

IS - 4

M1 - 045134

ER -