Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices

S. N. Grinyaev, L. N. Nikitina, V. G. Tyuterev

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The deformation potentials of electron scattering at short-wavelength phonons for intervalley transitions in the conduction band of short-period (GaAs)m(AlAs)n (001) (m, n = 1, 2, 3) superlattices are determined by the electron density functional method. The dependences of the electron and phonon states and deformation potentials on the layer thickness in the superlattices are analyzed. The results of ab initio calculations are in good agreement with the data of empirical calculation of the deformation potentials integrated over phonons, but differ from data on the corresponding potentials for partial scattering channels because of approximations of the phenomenological model of interatomic binding.

Original languageEnglish
Pages (from-to)320-331
Number of pages12
JournalSemiconductors
Volume48
Issue number3
DOIs
Publication statusPublished - Mar 2014

Fingerprint

Electron-phonon interactions
Superlattices
electron phonon interactions
superlattices
Phonons
phonons
Electron scattering
Electron transitions
Conduction bands
Carrier concentration
electron states
Scattering
Wavelength
conduction bands
electron scattering
Electrons
gallium arsenide
approximation
scattering
wavelengths

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices. / Grinyaev, S. N.; Nikitina, L. N.; Tyuterev, V. G.

In: Semiconductors, Vol. 48, No. 3, 03.2014, p. 320-331.

Research output: Contribution to journalArticle

Grinyaev, S. N. ; Nikitina, L. N. ; Tyuterev, V. G. / Electron-phonon interaction in short-period (GaAs)m(AlAs)n (001) superlattices. In: Semiconductors. 2014 ; Vol. 48, No. 3. pp. 320-331.
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