Abstract
A new result on the deflection of 150 MeV electron beams with using the 〈1 0 0〉 axis of a silicon crystal is presented. The channeling effect of electrons passed through the crystal was clearly seen. We also studied dependence of the deflection on the beam divergence. The simulation qualitatively agreed with the experimental data.
| Original language | English |
|---|---|
| Pages (from-to) | 16-19 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 252 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Nov 2006 |
| Externally published | Yes |
Keywords
- Channeling
- Electron beam deflection
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Strokov, S., Takahashi, T., Endo, I., Iinuma, M., Ueda, K., Kuroiwa, H., Ohnishi, T., & Sawada, S. (2006). Electron beam deflection with channeling in a silicon crystal at the REFER electron ring. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 252(1), 16-19. https://doi.org/10.1016/j.nimb.2006.07.011