Electron beam deflection with channeling in a silicon crystal at the REFER electron ring

Abstract

A new result on the deflection of 150 MeV electron beams with using the 〈1 0 0〉 axis of a silicon crystal is presented. The channeling effect of electrons passed through the crystal was clearly seen. We also studied dependence of the deflection on the beam divergence. The simulation qualitatively agreed with the experimental data.

Original language	English
Pages (from-to)	16-19
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	252
Issue number	1
DOIs	https://doi.org/10.1016/j.nimb.2006.07.011
Publication status	Published - Nov 2006
Externally published	Yes

Keywords

Channeling
Electron beam deflection

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2006.07.011

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Electron beam deflection with channeling in a silicon crystal at the REFER electron ring. / Strokov, S.; Takahashi, T.; Endo, I.; Iinuma, M.; Ueda, K.; Kuroiwa, H.; Ohnishi, T.; Sawada, Seiji.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 252, No. 1, 11.2006, p. 16-19.

Research output: Contribution to journal › Article › peer-review

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abstract = "A new result on the deflection of 150 MeV electron beams with using the 〈1 0 0〉 axis of a silicon crystal is presented. The channeling effect of electrons passed through the crystal was clearly seen. We also studied dependence of the deflection on the beam divergence. The simulation qualitatively agreed with the experimental data.",

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author = "S. Strokov and T. Takahashi and I. Endo and M. Iinuma and K. Ueda and H. Kuroiwa and T. Ohnishi and Seiji Sawada",

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AU - Strokov, S.

AU - Takahashi, T.

AU - Endo, I.

AU - Iinuma, M.

AU - Ueda, K.

AU - Kuroiwa, H.

AU - Ohnishi, T.

AU - Sawada, Seiji

PY - 2006/11

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N2 - A new result on the deflection of 150 MeV electron beams with using the 〈1 0 0〉 axis of a silicon crystal is presented. The channeling effect of electrons passed through the crystal was clearly seen. We also studied dependence of the deflection on the beam divergence. The simulation qualitatively agreed with the experimental data.

AB - A new result on the deflection of 150 MeV electron beams with using the 〈1 0 0〉 axis of a silicon crystal is presented. The channeling effect of electrons passed through the crystal was clearly seen. We also studied dependence of the deflection on the beam divergence. The simulation qualitatively agreed with the experimental data.

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KW - Electron beam deflection

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