Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure

Abstract

In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.

Original language	English
Article number	012098
Journal	Journal of Physics: Conference Series
Volume	741
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/741/1/012098
Publication status	Published - 15 Sep 2016
Externally published	Yes
Event	3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 - St Petersburg, Russian Federation Duration: 28 Mar 2016 → 30 Mar 2016

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1088/1742-6596/741/1/012098

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title = "Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure",

abstract = "In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which {"}shunts{"} the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.",

author = "Barko, {A. V.} and Pishchagin, {A. A.} and Grigoryev, {D. V.} and Tarasenko, {V. F.} and Shulepov, {M. A.}",

year = "2016",

month = sep,

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doi = "10.1088/1742-6596/741/1/012098",

language = "English",

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note = "3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 ; Conference date: 28-03-2016 Through 30-03-2016",

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TY - JOUR

T1 - Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure

AU - Barko, A. V.

AU - Pishchagin, A. A.

AU - Grigoryev, D. V.

AU - Tarasenko, V. F.

AU - Shulepov, M. A.

PY - 2016/9/15

Y1 - 2016/9/15

N2 - In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.

AB - In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.

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JO - Journal of Physics: Conference Series

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T2 - 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016

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