Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

A. V. Kabyshev, F. V. Konusov, G. E. Remnev

Research output: Contribution to journalArticle

Abstract

Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

Original languageEnglish
Pages (from-to)607-611
Number of pages5
JournalRussian Physics Journal
Volume56
Issue number6
DOIs
Publication statusPublished - Nov 2013

Fingerprint

ion implantation
electrical properties
silicon
pulses
vacuum
photoconductivity
implantation
heat
annealing
causes
carbon
ions

Keywords

  • ion implantation
  • photoconductivity
  • photosensitivity
  • silicon
  • vacuum annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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abstract = "Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.",
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author = "Kabyshev, {A. V.} and Konusov, {F. V.} and Remnev, {G. E.}",
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T1 - Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

AU - Kabyshev, A. V.

AU - Konusov, F. V.

AU - Remnev, G. E.

PY - 2013/11

Y1 - 2013/11

N2 - Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

AB - Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

KW - ion implantation

KW - photoconductivity

KW - photosensitivity

KW - silicon

KW - vacuum annealing

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JO - Russian Physics Journal

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