Abstract
Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
| Original language | English |
|---|---|
| Pages (from-to) | 607-611 |
| Number of pages | 5 |
| Journal | Russian Physics Journal |
| Volume | 56 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 2013 |
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Keywords
- ion implantation
- photoconductivity
- photosensitivity
- silicon
- vacuum annealing
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation. / Kabyshev, A. V.; Konusov, F. V.; Remnev, G. E.
In: Russian Physics Journal, Vol. 56, No. 6, 11.2013, p. 607-611.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation
AU - Kabyshev, A. V.
AU - Konusov, F. V.
AU - Remnev, G. E.
PY - 2013/11
Y1 - 2013/11
N2 - Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
AB - Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
KW - ion implantation
KW - photoconductivity
KW - photosensitivity
KW - silicon
KW - vacuum annealing
UR - http://www.scopus.com/inward/record.url?scp=84892173733&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84892173733&partnerID=8YFLogxK
U2 - 10.1007/s11182-013-0075-8
DO - 10.1007/s11182-013-0075-8
M3 - Article
AN - SCOPUS:84892173733
VL - 56
SP - 607
EP - 611
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 6
ER -