Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

Abstract

Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10^-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

Original language	English
Pages (from-to)	607-611
Number of pages	5
Journal	Russian Physics Journal
Volume	56
Issue number	6
DOIs	https://doi.org/10.1007/s11182-013-0075-8
Publication status	Published - Nov 2013

Keywords

ion implantation
photoconductivity
photosensitivity
silicon
vacuum annealing

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1007/s11182-013-0075-8

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Cite this

Kabyshev, A. V., Konusov, F. V., & Remnev, G. E. (2013). Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation. Russian Physics Journal, 56(6), 607-611. https://doi.org/10.1007/s11182-013-0075-8

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PY - 2013/11

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AB - Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

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KW - photoconductivity

KW - photosensitivity

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KW - vacuum annealing

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