Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

A. V. Kabyshev, F. V. Konusov, G. E. Remnev

Research output: Contribution to journalArticle


Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

Original languageEnglish
Pages (from-to)607-611
Number of pages5
JournalRussian Physics Journal
Issue number6
Publication statusPublished - Nov 2013



  • ion implantation
  • photoconductivity
  • photosensitivity
  • silicon
  • vacuum annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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