Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

A. V. Kabyshev, F. V. Konusov, G. E. Remnev

Research School of High-Energy Physics

Research output: Contribution to journal › Article

Abstract

Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10^-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

Original language	English
Pages (from-to)	607-611
Number of pages	5
Journal	Russian Physics Journal
Volume	56
Issue number	6
DOIs	https://doi.org/10.1007/s11182-013-0075-8
Publication status	Published - Nov 2013

Fingerprint

Keywords

ion implantation
photoconductivity
photosensitivity
silicon
vacuum annealing

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Kabyshev, A. V., Konusov, F. V., & Remnev, G. E. (2013). Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation. Russian Physics Journal, 56(6), 607-611. https://doi.org/10.1007/s11182-013-0075-8

@article{6d535615a350471b842c78de7fed409f,

title = "Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation",

abstract = "Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.",

keywords = "ion implantation, photoconductivity, photosensitivity, silicon, vacuum annealing",

author = "Kabyshev, {A. V.} and Konusov, {F. V.} and Remnev, {G. E.}",

year = "2013",

month = "11",

doi = "10.1007/s11182-013-0075-8",

language = "English",

volume = "56",

pages = "607--611",

journal = "Russian Physics Journal",

issn = "1064-8887",

publisher = "Consultants Bureau",

number = "6",

}

TY - JOUR

T1 - Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

AU - Kabyshev, A. V.

AU - Konusov, F. V.

AU - Remnev, G. E.

PY - 2013/11

Y1 - 2013/11

N2 - Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

AB - Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10-2 Pa, 300-1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

KW - ion implantation

KW - photoconductivity

KW - photosensitivity

KW - silicon

KW - vacuum annealing

UR - http://www.scopus.com/inward/record.url?scp=84892173733&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892173733&partnerID=8YFLogxK

U2 - 10.1007/s11182-013-0075-8

DO - 10.1007/s11182-013-0075-8

M3 - Article

AN - SCOPUS:84892173733

VL - 56

SP - 607

EP - 611

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 6

ER -

Access to Document

10.1007/s11182-013-0075-8