Electrical and photoelectric properties of polycrystalline diamond films deposited from an abnormal glow discharge

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Abstract

Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·1017-2.1·1021 eV-1 cm-3. Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007-0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jump length decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra.

Original languageEnglish
Article number012046
JournalJournal of Physics: Conference Series
Volume552
Issue number1
DOIs
Publication statusPublished - 2014

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diamond films
glow discharges
electrical properties
charge carriers
activation
photosensitivity
defects
photoconductivity
illuminating
energy distribution
grain boundaries
trapping
activation energy
absorption spectra
conduction
conductivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "Electrical and photoelectric properties of polycrystalline diamond films deposited from an abnormal glow discharge",
abstract = "Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·1017-2.1·1021 eV-1 cm-3. Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007-0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jump length decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra.",
author = "Konusov, {F. V.} and Kabyshev, {A. V.} and Linnik, {S. A.} and Gaydaychuk, {A. V.} and Remnev, {G. E.}",
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T1 - Electrical and photoelectric properties of polycrystalline diamond films deposited from an abnormal glow discharge

AU - Konusov, F. V.

AU - Kabyshev, A. V.

AU - Linnik, S. A.

AU - Gaydaychuk, A. V.

AU - Remnev, G. E.

PY - 2014

Y1 - 2014

N2 - Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·1017-2.1·1021 eV-1 cm-3. Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007-0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jump length decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra.

AB - Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·1017-2.1·1021 eV-1 cm-3. Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007-0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jump length decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra.

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