Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Division for Experimental Physics

Research output: Contribution to journal › Article

Abstract

Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of ²⁸Si electrical activation and ²⁸Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10^-2 s and duty factor of 100).

Original language	English
Pages (from-to)	253-257
Number of pages	5
Journal	Semiconductors
Volume	38
Issue number	3
DOIs	https://doi.org/10.1134/1.1682321
Publication status	Published - 1 Mar 2004

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Cite this

Ardyshev, M. V., Ardyshev, V. M., & Kryuchkov, Y. Y. (2004). Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing. Semiconductors, 38(3), 253-257. https://doi.org/10.1134/1.1682321

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10.1134/1.1682321