Abstract
Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of 28Si electrical activation and 28Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10-2 s and duty factor of 100).
| Original language | English |
|---|---|
| Pages (from-to) | 253-257 |
| Number of pages | 5 |
| Journal | Semiconductors |
| Volume | 38 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1 Mar 2004 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing. / Ardyshev, M. V.; Ardyshev, V. M.; Kryuchkov, Yu Yu.
In: Semiconductors, Vol. 38, No. 3, 01.03.2004, p. 253-257.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing
AU - Ardyshev, M. V.
AU - Ardyshev, V. M.
AU - Kryuchkov, Yu Yu
PY - 2004/3/1
Y1 - 2004/3/1
N2 - Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of 28Si electrical activation and 28Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10-2 s and duty factor of 100).
AB - Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of 28Si electrical activation and 28Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10-2 s and duty factor of 100).
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UR - http://www.scopus.com/inward/citedby.url?scp=1842738078&partnerID=8YFLogxK
U2 - 10.1134/1.1682321
DO - 10.1134/1.1682321
M3 - Article
VL - 38
SP - 253
EP - 257
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 3
ER -