Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing

Abstract

Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of ²⁸Si electrical activation and ²⁸Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10^-2 s and duty factor of 100).

Original language	English
Pages (from-to)	253-257
Number of pages	5
Journal	Semiconductors
Volume	38
Issue number	3
DOIs	https://doi.org/10.1134/1.1682321
Publication status	Published - 1 Mar 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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@article{b75df929d03f4608b075bf0bc27c7916,

title = "Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing",

abstract = "Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of 28Si electrical activation and 28Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10-2 s and duty factor of 100).",

author = "Ardyshev, {M. V.} and Ardyshev, {V. M.} and Kryuchkov, {Yu Yu}",

year = "2004",

month = mar,

day = "1",

doi = "10.1134/1.1682321",

language = "English",

volume = "38",

pages = "253--257",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "3",

}

TY - JOUR

T1 - Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing

AU - Ardyshev, M. V.

AU - Ardyshev, V. M.

AU - Kryuchkov, Yu Yu

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of 28Si electrical activation and 28Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10-2 s and duty factor of 100).

AB - Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of 28Si electrical activation and 28Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10-2 s and duty factor of 100).

UR - http://www.scopus.com/inward/record.url?scp=1842738078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842738078&partnerID=8YFLogxK

U2 - 10.1134/1.1682321

DO - 10.1134/1.1682321

M3 - Article

AN - SCOPUS:1842738078

VL - 38

SP - 253

EP - 257

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing

Abstract

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