Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Research output: Contribution to journalArticle

Abstract

Measurements of capacitance-voltage characteristics and Rutherford backscattering were used to study the parameters of silicon diffusion from preliminarily formed n-type layers into semi-insulating GaAs under electron-beam annealing and conventional heat treatment. The layers were doped with either sulfur or silicon. The degree of 28Si electrical activation and 28Si diffusion coefficient are found to depend on the dopant used to form the n-type layer and on the implantation conditions (continuous or pulsed-repetitive, with a pulse width of 1.3 × 10-2 s and duty factor of 100).

Original languageEnglish
Pages (from-to)253-257
Number of pages5
JournalSemiconductors
Volume38
Issue number3
DOIs
Publication statusPublished - 1 Mar 2004

Fingerprint

Gallium arsenide
Silicon
gallium
Electron beams
implantation
electron beams
Annealing
annealing
Rutherford backscattering spectroscopy
silicon
Sulfur
Capacitance
capacitance-voltage characteristics
Chemical activation
Heat treatment
Doping (additives)
backscattering
pulse duration
Electric potential
heat treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing. / Ardyshev, M. V.; Ardyshev, V. M.; Kryuchkov, Yu Yu.

In: Semiconductors, Vol. 38, No. 3, 01.03.2004, p. 253-257.

Research output: Contribution to journalArticle

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