Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon

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5 Citations (Scopus)

Abstract

It is shown that the inclusion of the band structure of energy levels of channeled positrons (as in the case of electrons) leads to a qualitative change in the angular distribution of X-ray radiation.

Original languageEnglish
Pages (from-to)290-296
Number of pages7
JournalJournal of Surface Investigation
Volume2
Issue number2
DOIs
Publication statusPublished - Apr 2008

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Angular distribution
Positrons
Silicon
Band structure
Electron energy levels
Radiation
X rays
Electrons

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

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title = "Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon",
abstract = "It is shown that the inclusion of the band structure of energy levels of channeled positrons (as in the case of electrons) leads to a qualitative change in the angular distribution of X-ray radiation.",
author = "Bogdanov, {O. V.} and Korotchenko, {K. B.} and Pivovarov, {Yu L.}",
year = "2008",
month = "4",
doi = "10.1134/S1027451008020249",
language = "English",
volume = "2",
pages = "290--296",
journal = "Journal of Surface Investigation",
issn = "1027-4510",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "2",

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T1 - Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon

AU - Bogdanov, O. V.

AU - Korotchenko, K. B.

AU - Pivovarov, Yu L.

PY - 2008/4

Y1 - 2008/4

N2 - It is shown that the inclusion of the band structure of energy levels of channeled positrons (as in the case of electrons) leads to a qualitative change in the angular distribution of X-ray radiation.

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JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

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