Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon

O. V. Bogdanov, K. B. Korotchenko, Yu L. Pivovarov

Research output: Contribution to journal › Article

Abstract

It is shown that the inclusion of the band structure of energy levels of channeled positrons (as in the case of electrons) leads to a qualitative change in the angular distribution of X-ray radiation.

Original language	English
Pages (from-to)	290-296
Number of pages	7
Journal	Journal of Surface Investigation
Volume	2
Issue number	2
DOIs	https://doi.org/10.1134/S1027451008020249
Publication status	Published - Apr 2008

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ASJC Scopus subject areas

Surfaces, Coatings and Films

Cite this

Bogdanov, O. V., Korotchenko, K. B., & Pivovarov, Y. L. (2008). Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon. Journal of Surface Investigation, 2(2), 290-296. https://doi.org/10.1134/S1027451008020249

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Access to Document

10.1134/S1027451008020249