Effect of temperature on processes of radiation-induced generation of primary defects in MgF2 crystals

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Abstract

The spectral and kinetic parameters of the absorption and emission relaxation initiated by a single nanosecond-range electron pulse in MgF2 crystals are studied in the temperature range 20-550 K. It is found that the relationship between the two channels of dissipation of the electronic excitation energy (generation of F centers and short-lived excitons) does not depend on the temperature of the irradiated crystal in the temperature range 20-120 K and changes in favor of the F centers at T ≥ 150 K. The temperature quenching of the 3.2-eV exciton emission at T ≥ 60 K is detected. The ionic structure of the short-lived excitonic state is discussed.

Original languageEnglish
Pages (from-to)746-750
Number of pages5
JournalOptics and Spectroscopy (English translation of Optika i Spektroskopiya)
Volume95
Issue number5
DOIs
Publication statusPublished - 1 Nov 2003

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Radiation
Defects
Crystals
defects
radiation
color centers
Excitons
crystals
excitons
Temperature
temperature
Excitation energy
Kinetic parameters
Quenching
dissipation
quenching
Electrons
kinetics
pulses
electronics

ASJC Scopus subject areas

  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

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title = "Effect of temperature on processes of radiation-induced generation of primary defects in MgF2 crystals",
abstract = "The spectral and kinetic parameters of the absorption and emission relaxation initiated by a single nanosecond-range electron pulse in MgF2 crystals are studied in the temperature range 20-550 K. It is found that the relationship between the two channels of dissipation of the electronic excitation energy (generation of F centers and short-lived excitons) does not depend on the temperature of the irradiated crystal in the temperature range 20-120 K and changes in favor of the F centers at T ≥ 150 K. The temperature quenching of the 3.2-eV exciton emission at T ≥ 60 K is detected. The ionic structure of the short-lived excitonic state is discussed.",
author = "Lisitsyna, {L. A.} and Korepanov, {V. I.} and Grechkina, {Tatiana Valerievna}",
year = "2003",
month = "11",
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language = "English",
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T1 - Effect of temperature on processes of radiation-induced generation of primary defects in MgF2 crystals

AU - Lisitsyna, L. A.

AU - Korepanov, V. I.

AU - Grechkina, Tatiana Valerievna

PY - 2003/11/1

Y1 - 2003/11/1

N2 - The spectral and kinetic parameters of the absorption and emission relaxation initiated by a single nanosecond-range electron pulse in MgF2 crystals are studied in the temperature range 20-550 K. It is found that the relationship between the two channels of dissipation of the electronic excitation energy (generation of F centers and short-lived excitons) does not depend on the temperature of the irradiated crystal in the temperature range 20-120 K and changes in favor of the F centers at T ≥ 150 K. The temperature quenching of the 3.2-eV exciton emission at T ≥ 60 K is detected. The ionic structure of the short-lived excitonic state is discussed.

AB - The spectral and kinetic parameters of the absorption and emission relaxation initiated by a single nanosecond-range electron pulse in MgF2 crystals are studied in the temperature range 20-550 K. It is found that the relationship between the two channels of dissipation of the electronic excitation energy (generation of F centers and short-lived excitons) does not depend on the temperature of the irradiated crystal in the temperature range 20-120 K and changes in favor of the F centers at T ≥ 150 K. The temperature quenching of the 3.2-eV exciton emission at T ≥ 60 K is detected. The ionic structure of the short-lived excitonic state is discussed.

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U2 - 10.1134/1.1628723

DO - 10.1134/1.1628723

M3 - Article

VL - 95

SP - 746

EP - 750

JO - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

JF - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

SN - 0030-400X

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ER -