Effect of temperature on processes of radiation-induced generation of primary defects in MgF2 crystals

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Abstract

The spectral and kinetic parameters of the absorption and emission relaxation initiated by a single nanosecond-range electron pulse in MgF2 crystals are studied in the temperature range 20-550 K. It is found that the relationship between the two channels of dissipation of the electronic excitation energy (generation of F centers and short-lived excitons) does not depend on the temperature of the irradiated crystal in the temperature range 20-120 K and changes in favor of the F centers at T ≥ 150 K. The temperature quenching of the 3.2-eV exciton emission at T ≥ 60 K is detected. The ionic structure of the short-lived excitonic state is discussed.

Original languageEnglish
Pages (from-to)746-750
Number of pages5
JournalOptics and Spectroscopy (English translation of Optika i Spektroskopiya)
Volume95
Issue number5
DOIs
Publication statusPublished - 1 Nov 2003

ASJC Scopus subject areas

  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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