Effect of substrate-drop parameters on nanowhiskers morphology

Alla G. Nastovjak, Igor G. Neizvestny, Nataliya L. Shwartz, Evgeniya S. Sheremet, Zoya Sh Yanovitskaja

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Si nanowhiskers (NW) morphology was studied by Monte Carlo simulation. It was found out that different substrate-seed wetting conditions can lead to growth of straight, curved or tube-like NWs. Initial substrate-seed interface orientation and orientation of growing NW sidewall facets determine growth directions of model NWs.

Original languageEnglish
Title of host publication2008 International Workshop and Tutorials on Electron Devices and Materials Proceedings - 9th Annual, EDM'2008
Pages41-44
Number of pages4
DOIs
Publication statusPublished - 23 Sep 2008
Externally publishedYes
Event2008 International Workshop and Tutorials on Electron Devices and Materials - 9th Annual, EDM'2008 - Novosibirsk, Russian Federation
Duration: 1 Jul 2008 → 5 Jul 2008

Conference

Conference2008 International Workshop and Tutorials on Electron Devices and Materials - 9th Annual, EDM'2008
CountryRussian Federation
CityNovosibirsk
Period1.7.08 → 5.7.08

Keywords

  • Monte Carlo
  • Nanowhisker

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    • Cite this

    Nastovjak, A. G., Neizvestny, I. G., Shwartz, N. L., Sheremet, E. S., & Yanovitskaja, Z. S. (2008). Effect of substrate-drop parameters on nanowhiskers morphology. In 2008 International Workshop and Tutorials on Electron Devices and Materials Proceedings - 9th Annual, EDM'2008 (pp. 41-44). [4585841] https://doi.org/10.1109/SIBEDM.2008.4585841