EFFECT OF SMALL DOSES OF gamma RAYS ON THE STRUCTURE OF MICRODEFECTS AND ON THE ELECTROPHYSICAL PROPERTIES OF SILICON SINGLE CRYSTALS AND EPITAXIAL LAYERS.

V. G. Mokerov, S. N. Nikiforova-Denisova, E. N. Ovcharenko, V. P. Panasyuk, V. I. Smirnov, Yu A. Timoshnikov, I. P. Chernov

Division for Experimental Physics

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Abstract

In this investigation the authors have studied the action of gamma rays on the swirl picture of microdefects of single crystal silicon, as well as on the electrophysical characteristics of single crystal silicon, epitaxial layers and device structures based on them.

Original language	English
Pages (from-to)	28-32
Number of pages	5
Journal	Soviet microelectronics
Volume	15
Issue number	1
Publication status	Published - Jan 1986

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Mokerov, V. G., Nikiforova-Denisova, S. N., Ovcharenko, E. N., Panasyuk, V. P., Smirnov, V. I., Timoshnikov, Y. A., & Chernov, I. P. (1986). EFFECT OF SMALL DOSES OF gamma RAYS ON THE STRUCTURE OF MICRODEFECTS AND ON THE ELECTROPHYSICAL PROPERTIES OF SILICON SINGLE CRYSTALS AND EPITAXIAL LAYERS. Soviet microelectronics, 15(1), 28-32.

EFFECT OF SMALL DOSES OF gamma RAYS ON THE STRUCTURE OF MICRODEFECTS AND ON THE ELECTROPHYSICAL PROPERTIES OF SILICON SINGLE CRYSTALS AND EPITAXIAL LAYERS. / Mokerov, V. G.; Nikiforova-Denisova, S. N.; Ovcharenko, E. N.; Panasyuk, V. P.; Smirnov, V. I.; Timoshnikov, Yu A.; Chernov, I. P.

In: Soviet microelectronics, Vol. 15, No. 1, 01.1986, p. 28-32.

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abstract = "In this investigation the authors have studied the action of gamma rays on the swirl picture of microdefects of single crystal silicon, as well as on the electrophysical characteristics of single crystal silicon, epitaxial layers and device structures based on them.",

author = "Mokerov, {V. G.} and Nikiforova-Denisova, {S. N.} and Ovcharenko, {E. N.} and Panasyuk, {V. P.} and Smirnov, {V. I.} and Timoshnikov, {Yu A.} and Chernov, {I. P.}",

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AU - Nikiforova-Denisova, S. N.

AU - Ovcharenko, E. N.

AU - Panasyuk, V. P.

AU - Smirnov, V. I.

AU - Timoshnikov, Yu A.

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EFFECT OF SMALL DOSES OF gamma RAYS ON THE STRUCTURE OF MICRODEFECTS AND ON THE ELECTROPHYSICAL PROPERTIES OF SILICON SINGLE CRYSTALS AND EPITAXIAL LAYERS.

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