Abstract
In this investigation the authors have studied the action of gamma rays on the swirl picture of microdefects of single crystal silicon, as well as on the electrophysical characteristics of single crystal silicon, epitaxial layers and device structures based on them.
Original language | English |
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Pages (from-to) | 28-32 |
Number of pages | 5 |
Journal | Soviet microelectronics |
Volume | 15 |
Issue number | 1 |
Publication status | Published - Jan 1986 |
ASJC Scopus subject areas
- Engineering(all)