EFFECT OF SMALL DOSES OF gamma RAYS ON THE STRUCTURE OF MICRODEFECTS AND ON THE ELECTROPHYSICAL PROPERTIES OF SILICON SINGLE CRYSTALS AND EPITAXIAL LAYERS.

V. G. Mokerov, S. N. Nikiforova-Denisova, E. N. Ovcharenko, V. P. Panasyuk, V. I. Smirnov, Yu A. Timoshnikov, I. P. Chernov

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1 Citation (Scopus)

Abstract

In this investigation the authors have studied the action of gamma rays on the swirl picture of microdefects of single crystal silicon, as well as on the electrophysical characteristics of single crystal silicon, epitaxial layers and device structures based on them.

Original languageEnglish
Pages (from-to)28-32
Number of pages5
JournalSoviet microelectronics
Volume15
Issue number1
Publication statusPublished - Jan 1986

ASJC Scopus subject areas

  • Engineering(all)

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    Mokerov, V. G., Nikiforova-Denisova, S. N., Ovcharenko, E. N., Panasyuk, V. P., Smirnov, V. I., Timoshnikov, Y. A., & Chernov, I. P. (1986). EFFECT OF SMALL DOSES OF gamma RAYS ON THE STRUCTURE OF MICRODEFECTS AND ON THE ELECTROPHYSICAL PROPERTIES OF SILICON SINGLE CRYSTALS AND EPITAXIAL LAYERS. Soviet microelectronics, 15(1), 28-32.