Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy

Abstract

The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg_0.78Cd_0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.

Original language	English
Pages (from-to)	970-977
Number of pages	8
Journal	Russian Physics Journal
Volume	58
Issue number	7
DOIs	https://doi.org/10.1007/s11182-015-0597-3
Publication status	Published - 1 Nov 2015
Externally published	Yes

Keywords

Admittance
Fixed charge
HgCdTe
MIS structure
Molecular beam epitaxy
Pulsed nanosecond volume discharge

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1007/s11182-015-0597-3

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Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Grigor’ev, D. V., Tarasenko, V. F., & Shulepov, M. A. (2015). Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy. Russian Physics Journal, 58(7), 970-977. https://doi.org/10.1007/s11182-015-0597-3

Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy. / Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Grigor’ev, D. V.; Tarasenko, V. F.; Shulepov, M. A.

In: Russian Physics Journal, Vol. 58, No. 7, 01.11.2015, p. 970-977.

Research output: Contribution to journal › Article › peer-review

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title = "Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy",

abstract = "The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.",

keywords = "Admittance, Fixed charge, HgCdTe, MIS structure, Molecular beam epitaxy, Pulsed nanosecond volume discharge",

author = "Voitsekhovskii, {A. V.} and Nesmelov, {S. N.} and Dzyadukh, {S. M.} and Grigor{\textquoteright}ev, {D. V.} and Tarasenko, {V. F.} and Shulepov, {M. A.}",

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AU - Voitsekhovskii, A. V.

AU - Nesmelov, S. N.

AU - Dzyadukh, S. M.

AU - Grigor’ev, D. V.

AU - Tarasenko, V. F.

AU - Shulepov, M. A.

PY - 2015/11/1

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AB - The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.

KW - Admittance

KW - Fixed charge

KW - HgCdTe

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KW - Molecular beam epitaxy

KW - Pulsed nanosecond volume discharge

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