Abstract
The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.
| Original language | English |
|---|---|
| Pages (from-to) | 970-977 |
| Number of pages | 8 |
| Journal | Russian Physics Journal |
| Volume | 58 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Nov 2015 |
| Externally published | Yes |
Fingerprint
Keywords
- Admittance
- Fixed charge
- HgCdTe
- MIS structure
- Molecular beam epitaxy
- Pulsed nanosecond volume discharge
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy. / Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Grigor’ev, D. V.; Tarasenko, V. F.; Shulepov, M. A.
In: Russian Physics Journal, Vol. 58, No. 7, 01.11.2015, p. 970-977.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy
AU - Voitsekhovskii, A. V.
AU - Nesmelov, S. N.
AU - Dzyadukh, S. M.
AU - Grigor’ev, D. V.
AU - Tarasenko, V. F.
AU - Shulepov, M. A.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.
AB - The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.
KW - Admittance
KW - Fixed charge
KW - HgCdTe
KW - MIS structure
KW - Molecular beam epitaxy
KW - Pulsed nanosecond volume discharge
UR - http://www.scopus.com/inward/record.url?scp=84946926359&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946926359&partnerID=8YFLogxK
U2 - 10.1007/s11182-015-0597-3
DO - 10.1007/s11182-015-0597-3
M3 - Article
VL - 58
SP - 970
EP - 977
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 7
ER -