Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. V. Grigor’ev, V. F. Tarasenko, M. A. Shulepov

Research output: Contribution to journalArticle

Abstract

The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.

Original languageEnglish
Pages (from-to)970-977
Number of pages8
JournalRussian Physics Journal
Volume58
Issue number7
DOIs
Publication statusPublished - 1 Nov 2015
Externally publishedYes

Fingerprint

MIS (semiconductors)
atmospheric pressure
molecular beam epitaxy
electrical properties
air
pulses
capacitance-voltage characteristics
electrical impedance
hysteresis
impurities
defects
temperature

Keywords

  • Admittance
  • Fixed charge
  • HgCdTe
  • MIS structure
  • Molecular beam epitaxy
  • Pulsed nanosecond volume discharge

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy. / Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Grigor’ev, D. V.; Tarasenko, V. F.; Shulepov, M. A.

In: Russian Physics Journal, Vol. 58, No. 7, 01.11.2015, p. 970-977.

Research output: Contribution to journalArticle

Voitsekhovskii, A. V. ; Nesmelov, S. N. ; Dzyadukh, S. M. ; Grigor’ev, D. V. ; Tarasenko, V. F. ; Shulepov, M. A. / Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy. In: Russian Physics Journal. 2015 ; Vol. 58, No. 7. pp. 970-977.
@article{54700e45e59a40859ebd7496067b10cc,
title = "Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy",
abstract = "The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.",
keywords = "Admittance, Fixed charge, HgCdTe, MIS structure, Molecular beam epitaxy, Pulsed nanosecond volume discharge",
author = "Voitsekhovskii, {A. V.} and Nesmelov, {S. N.} and Dzyadukh, {S. M.} and Grigor’ev, {D. V.} and Tarasenko, {V. F.} and Shulepov, {M. A.}",
year = "2015",
month = "11",
day = "1",
doi = "10.1007/s11182-015-0597-3",
language = "English",
volume = "58",
pages = "970--977",
journal = "Russian Physics Journal",
issn = "1064-8887",
publisher = "Consultants Bureau",
number = "7",

}

TY - JOUR

T1 - Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy

AU - Voitsekhovskii, A. V.

AU - Nesmelov, S. N.

AU - Dzyadukh, S. M.

AU - Grigor’ev, D. V.

AU - Tarasenko, V. F.

AU - Shulepov, M. A.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.

AB - The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density ofpositive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.

KW - Admittance

KW - Fixed charge

KW - HgCdTe

KW - MIS structure

KW - Molecular beam epitaxy

KW - Pulsed nanosecond volume discharge

UR - http://www.scopus.com/inward/record.url?scp=84946926359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946926359&partnerID=8YFLogxK

U2 - 10.1007/s11182-015-0597-3

DO - 10.1007/s11182-015-0597-3

M3 - Article

VL - 58

SP - 970

EP - 977

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 7

ER -