Effect of precursor flow rate on physical and mechanical properties of a-C:H:SiO x films deposited by PACVD method

A. S. Grenadyorov, K. V. Oskomov, N. F. Kovsharov, A. A. Solovyev

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

In this paper the deposition of a-C:H:SiO x films by plasma activated chemical vapour deposition in a mixture of argon and polyphenylmethylsiloxane (PPMS) vapor with the impulse bipolar bias voltage applied to the substrate is presented. The paper discusses the dependence of the physico-mechanical properties of the deposited films on the flow rate of the PPMS precursor. The structure of the deposited films was determined by Fourier transform infrared spectroscopy and Raman spectroscopy. Mechanical properties characterization of a-C:H:SiOx films (hardness and elastic modulus) was made using the nanoindentation method. Hardness and elastic modulus were used to evaluate the endurance capability (H/E) and resistance to plastic deformation (H 3 /E 2 ). The elastic recovery was calculated based on loading and unloading curves. It is shown that with an increase in the PPMS flow rate in the range of 35-287 μl/min, the films deposition rate increases from 17 to 221 nm/min. At this films mechanical properties, such as hardness, elastic modulus and elastic recovery did not deteriorate. The maximum values of the endurance capability and resistance to plastic deformation are obtained at a flow rate of 175 μl/min and equal to 0.12 and 203 MPa, respectively.

Original languageEnglish
Article number042046
JournalJournal of Physics: Conference Series
Volume1115
Issue number4
DOIs
Publication statusPublished - 27 Nov 2018
Externally publishedYes
Event6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018 - Tomsk, Russian Federation
Duration: 16 Sep 201822 Sep 2018

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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