Abstract
Titanium dioxide film is one of the most promising self-cleaning materials. The self-cleaning performance is directly related to the photocatalytic activity and surface wettability, which, in turn, depends on the TiO2 film structure parameters. Nitrogen-doping and post annealing are commonly used for TiO2 film treatment. The present paper addresses the mechanisms of N-doping and annealing induced TiO2 film structure transition, band gap narrowing and wettability transition. It is shown that N-doping combined with annealing leads to anatase → rutile phase transition, formation of hierarchical topography, change of surface chemical composition, and consequently results in reduction of band gap energy and water contact angle. N-doping level and N-linkages are found to significantly affect the structure/properties of annealed TiO2 and N-doped TiO2 films. The proposed mechanisms might help optimize TiO2 film synthesis and post treatment procedures. Moreover, annealed N-doped TiO2 film with highest N-content, simultaneously exhibiting anatase-rutile polycrystalline structure, high roughness, as well as lowest band gap energy and water contact angle, is supposed to present optimal self-cleaning performance.
| Original language | English |
|---|---|
| Article number | 144048 |
| Journal | Applied Surface Science |
| Volume | 500 |
| DOIs | |
| Publication status | Published - 15 Jan 2020 |
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Keywords
- Band gap narrowing
- N-doped TiO film
- Pulsed DC magnetron sputtering
- Structure evolution
- Wettability transition
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
Effect of nitrogen-doping and post annealing on wettability and band gap energy of TiO2 thin film. / Sun, Zhilei; Pichugin, V. F.; Evdokimov, K. E.; Konishchev, M. E.; Syrtanov, M. S.; Kudiiarov, V. N.; Li, Ke; Tverdokhlebov, S. I.
In: Applied Surface Science, Vol. 500, 144048, 15.01.2020.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of nitrogen-doping and post annealing on wettability and band gap energy of TiO2 thin film
AU - Sun, Zhilei
AU - Pichugin, V. F.
AU - Evdokimov, K. E.
AU - Konishchev, M. E.
AU - Syrtanov, M. S.
AU - Kudiiarov, V. N.
AU - Li, Ke
AU - Tverdokhlebov, S. I.
PY - 2020/1/15
Y1 - 2020/1/15
N2 - Titanium dioxide film is one of the most promising self-cleaning materials. The self-cleaning performance is directly related to the photocatalytic activity and surface wettability, which, in turn, depends on the TiO2 film structure parameters. Nitrogen-doping and post annealing are commonly used for TiO2 film treatment. The present paper addresses the mechanisms of N-doping and annealing induced TiO2 film structure transition, band gap narrowing and wettability transition. It is shown that N-doping combined with annealing leads to anatase → rutile phase transition, formation of hierarchical topography, change of surface chemical composition, and consequently results in reduction of band gap energy and water contact angle. N-doping level and N-linkages are found to significantly affect the structure/properties of annealed TiO2 and N-doped TiO2 films. The proposed mechanisms might help optimize TiO2 film synthesis and post treatment procedures. Moreover, annealed N-doped TiO2 film with highest N-content, simultaneously exhibiting anatase-rutile polycrystalline structure, high roughness, as well as lowest band gap energy and water contact angle, is supposed to present optimal self-cleaning performance.
AB - Titanium dioxide film is one of the most promising self-cleaning materials. The self-cleaning performance is directly related to the photocatalytic activity and surface wettability, which, in turn, depends on the TiO2 film structure parameters. Nitrogen-doping and post annealing are commonly used for TiO2 film treatment. The present paper addresses the mechanisms of N-doping and annealing induced TiO2 film structure transition, band gap narrowing and wettability transition. It is shown that N-doping combined with annealing leads to anatase → rutile phase transition, formation of hierarchical topography, change of surface chemical composition, and consequently results in reduction of band gap energy and water contact angle. N-doping level and N-linkages are found to significantly affect the structure/properties of annealed TiO2 and N-doped TiO2 films. The proposed mechanisms might help optimize TiO2 film synthesis and post treatment procedures. Moreover, annealed N-doped TiO2 film with highest N-content, simultaneously exhibiting anatase-rutile polycrystalline structure, high roughness, as well as lowest band gap energy and water contact angle, is supposed to present optimal self-cleaning performance.
KW - Band gap narrowing
KW - N-doped TiO film
KW - Pulsed DC magnetron sputtering
KW - Structure evolution
KW - Wettability transition
UR - http://www.scopus.com/inward/record.url?scp=85072929100&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072929100&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2019.144048
DO - 10.1016/j.apsusc.2019.144048
M3 - Article
AN - SCOPUS:85072929100
VL - 500
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
M1 - 144048
ER -