Effect of Modification of an InP Surface by (V<inf>2</inf>O<inf>5</inf> + PbO) AND (NiO + PbO) Oxide Mixtures of Different Compositions on the Thermal Oxidation Process and the Characteristics of the Formed Oxide Films

I. Y. Mittova, E. V. Tomina, A. V. Zabolotskaya, A. A. Samsonov, V. V. Kozik, B. V. Sladkopevtsev, N. N. Tret’yakov

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Vanadium oxide is an active chemostimulator of the oxidation of InP. This fact is manifested by an abrupt drop in the effective activation energy (EAE) of the process, a significant increase in the rate of growth of the thickness of the films (by 70 to 110%), and an improvement in their dielectric properties, due to effective bonding of the indium to its oxide form. All of this is evidence of a synchronous catalytic mechanism of oxidation of InP with deposited V<inf>2</inf>O<inf>5</inf>layers of nanosize thickness. The use of a V<inf>2</inf>O<inf>5</inf> + PbO mixture makes it possible to track the dynamics of decrease of catalytic action of V<inf>2</inf>O<inf>5</inf>during oxidation under gradual increase in the PbO content of the mixture, with PbO entering as the oxygen transit agents for the InP components. The NiO + РbО mixture is composed of two oxides, both of which are oxygen transit agents. In view of this, the aim of the present work is to elucidate the combined chemostimulative action of nanosize layers of the oxide mixtures V<inf>2</inf>O<inf>5</inf> + PbO and NiO + PbO, magnetron sputtered onto an InP surface, on the thermal oxidation of the obtained heterostructures. The practical absence of consumption of vanadium oxide (x-ray phase analysis data) confirms the presence during thermal oxidation of the (V<inf>2</inf>O<inf>5</inf> + PbO)/InP heterostructures of a regeneration cycle of the V<inf>2</inf>O<inf>5</inf>catalyzer. The lead oxide is fixed only at the early stages of the process, which is evidence of consumption of the PbO transit agent during InP oxidation. For (NiO + РbО)/InP (86 or 52 mole% РbО) heterostructures, consumption of NiO and PbO during the thermal oxidation process (XRD data) has been established, which confirms that the process proceeds via a transit mechanism. For oxide/phosphate films formed by oxidation of (V<inf>2</inf>O<inf>5</inf> + PbO)/InP heterostructures, the size of the individual crystallites lies within the limits 100–150 nm (AFM data), whereas for (NiO + РbО)/InP heterostructures crystallites in the size range 150–200 nm are present in the oxide films.

    Original languageEnglish
    JournalRussian Physics Journal
    DOIs
    Publication statusAccepted/In press - 17 Apr 2015

    Fingerprint

    oxide films
    oxidation
    oxides
    transit
    vanadium oxides
    crystallites
    lead oxides
    oxygen
    regeneration
    indium
    dielectric properties
    phosphates
    atomic force microscopy
    activation energy
    cycles
    x rays

    Keywords

    • indium phosphide
    • oxidation
    • reactive magnetron sputtering
    • vanadium oxide

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Effect of Modification of an InP Surface by (V<inf>2</inf>O<inf>5</inf> + PbO) AND (NiO + PbO) Oxide Mixtures of Different Compositions on the Thermal Oxidation Process and the Characteristics of the Formed Oxide Films. / Mittova, I. Y.; Tomina, E. V.; Zabolotskaya, A. V.; Samsonov, A. A.; Kozik, V. V.; Sladkopevtsev, B. V.; Tret’yakov, N. N.

    In: Russian Physics Journal, 17.04.2015.

    Research output: Contribution to journalArticle

    @article{fc9197d6dd244f43a4520a456df50f67,
    title = "Effect of Modification of an InP Surface by (V2O5 + PbO) AND (NiO + PbO) Oxide Mixtures of Different Compositions on the Thermal Oxidation Process and the Characteristics of the Formed Oxide Films",
    abstract = "Vanadium oxide is an active chemostimulator of the oxidation of InP. This fact is manifested by an abrupt drop in the effective activation energy (EAE) of the process, a significant increase in the rate of growth of the thickness of the films (by 70 to 110{\%}), and an improvement in their dielectric properties, due to effective bonding of the indium to its oxide form. All of this is evidence of a synchronous catalytic mechanism of oxidation of InP with deposited V2O5layers of nanosize thickness. The use of a V2O5 + PbO mixture makes it possible to track the dynamics of decrease of catalytic action of V2O5during oxidation under gradual increase in the PbO content of the mixture, with PbO entering as the oxygen transit agents for the InP components. The NiO + РbО mixture is composed of two oxides, both of which are oxygen transit agents. In view of this, the aim of the present work is to elucidate the combined chemostimulative action of nanosize layers of the oxide mixtures V2O5 + PbO and NiO + PbO, magnetron sputtered onto an InP surface, on the thermal oxidation of the obtained heterostructures. The practical absence of consumption of vanadium oxide (x-ray phase analysis data) confirms the presence during thermal oxidation of the (V2O5 + PbO)/InP heterostructures of a regeneration cycle of the V2O5catalyzer. The lead oxide is fixed only at the early stages of the process, which is evidence of consumption of the PbO transit agent during InP oxidation. For (NiO + РbО)/InP (86 or 52 mole{\%} РbО) heterostructures, consumption of NiO and PbO during the thermal oxidation process (XRD data) has been established, which confirms that the process proceeds via a transit mechanism. For oxide/phosphate films formed by oxidation of (V2O5 + PbO)/InP heterostructures, the size of the individual crystallites lies within the limits 100–150 nm (AFM data), whereas for (NiO + РbО)/InP heterostructures crystallites in the size range 150–200 nm are present in the oxide films.",
    keywords = "indium phosphide, oxidation, reactive magnetron sputtering, vanadium oxide",
    author = "Mittova, {I. Y.} and Tomina, {E. V.} and Zabolotskaya, {A. V.} and Samsonov, {A. A.} and Kozik, {V. V.} and Sladkopevtsev, {B. V.} and Tret’yakov, {N. N.}",
    year = "2015",
    month = "4",
    day = "17",
    doi = "10.1007/s11182-015-0439-3",
    language = "English",
    journal = "Russian Physics Journal",
    issn = "1064-8887",
    publisher = "Consultants Bureau",

    }

    TY - JOUR

    T1 - Effect of Modification of an InP Surface by (V2O5 + PbO) AND (NiO + PbO) Oxide Mixtures of Different Compositions on the Thermal Oxidation Process and the Characteristics of the Formed Oxide Films

    AU - Mittova, I. Y.

    AU - Tomina, E. V.

    AU - Zabolotskaya, A. V.

    AU - Samsonov, A. A.

    AU - Kozik, V. V.

    AU - Sladkopevtsev, B. V.

    AU - Tret’yakov, N. N.

    PY - 2015/4/17

    Y1 - 2015/4/17

    N2 - Vanadium oxide is an active chemostimulator of the oxidation of InP. This fact is manifested by an abrupt drop in the effective activation energy (EAE) of the process, a significant increase in the rate of growth of the thickness of the films (by 70 to 110%), and an improvement in their dielectric properties, due to effective bonding of the indium to its oxide form. All of this is evidence of a synchronous catalytic mechanism of oxidation of InP with deposited V2O5layers of nanosize thickness. The use of a V2O5 + PbO mixture makes it possible to track the dynamics of decrease of catalytic action of V2O5during oxidation under gradual increase in the PbO content of the mixture, with PbO entering as the oxygen transit agents for the InP components. The NiO + РbО mixture is composed of two oxides, both of which are oxygen transit agents. In view of this, the aim of the present work is to elucidate the combined chemostimulative action of nanosize layers of the oxide mixtures V2O5 + PbO and NiO + PbO, magnetron sputtered onto an InP surface, on the thermal oxidation of the obtained heterostructures. The practical absence of consumption of vanadium oxide (x-ray phase analysis data) confirms the presence during thermal oxidation of the (V2O5 + PbO)/InP heterostructures of a regeneration cycle of the V2O5catalyzer. The lead oxide is fixed only at the early stages of the process, which is evidence of consumption of the PbO transit agent during InP oxidation. For (NiO + РbО)/InP (86 or 52 mole% РbО) heterostructures, consumption of NiO and PbO during the thermal oxidation process (XRD data) has been established, which confirms that the process proceeds via a transit mechanism. For oxide/phosphate films formed by oxidation of (V2O5 + PbO)/InP heterostructures, the size of the individual crystallites lies within the limits 100–150 nm (AFM data), whereas for (NiO + РbО)/InP heterostructures crystallites in the size range 150–200 nm are present in the oxide films.

    AB - Vanadium oxide is an active chemostimulator of the oxidation of InP. This fact is manifested by an abrupt drop in the effective activation energy (EAE) of the process, a significant increase in the rate of growth of the thickness of the films (by 70 to 110%), and an improvement in their dielectric properties, due to effective bonding of the indium to its oxide form. All of this is evidence of a synchronous catalytic mechanism of oxidation of InP with deposited V2O5layers of nanosize thickness. The use of a V2O5 + PbO mixture makes it possible to track the dynamics of decrease of catalytic action of V2O5during oxidation under gradual increase in the PbO content of the mixture, with PbO entering as the oxygen transit agents for the InP components. The NiO + РbО mixture is composed of two oxides, both of which are oxygen transit agents. In view of this, the aim of the present work is to elucidate the combined chemostimulative action of nanosize layers of the oxide mixtures V2O5 + PbO and NiO + PbO, magnetron sputtered onto an InP surface, on the thermal oxidation of the obtained heterostructures. The practical absence of consumption of vanadium oxide (x-ray phase analysis data) confirms the presence during thermal oxidation of the (V2O5 + PbO)/InP heterostructures of a regeneration cycle of the V2O5catalyzer. The lead oxide is fixed only at the early stages of the process, which is evidence of consumption of the PbO transit agent during InP oxidation. For (NiO + РbО)/InP (86 or 52 mole% РbО) heterostructures, consumption of NiO and PbO during the thermal oxidation process (XRD data) has been established, which confirms that the process proceeds via a transit mechanism. For oxide/phosphate films formed by oxidation of (V2O5 + PbO)/InP heterostructures, the size of the individual crystallites lies within the limits 100–150 nm (AFM data), whereas for (NiO + РbО)/InP heterostructures crystallites in the size range 150–200 nm are present in the oxide films.

    KW - indium phosphide

    KW - oxidation

    KW - reactive magnetron sputtering

    KW - vanadium oxide

    UR - http://www.scopus.com/inward/record.url?scp=84927931607&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84927931607&partnerID=8YFLogxK

    U2 - 10.1007/s11182-015-0439-3

    DO - 10.1007/s11182-015-0439-3

    M3 - Article

    JO - Russian Physics Journal

    JF - Russian Physics Journal

    SN - 1064-8887

    ER -