Numerical simulation technique was applied to study the effect of Al defect structure on 1 MeV energy H+ and C6+ ions location upon irradiation. Concentrations of 1010-1012 cm-3 and volume defect size from 0.1 to 0.5 μm are considered. It is shown that volume defects in Al give rise to an increase in projectile ranges, distortion of implanted ion profiles and decrease in the energy release density. These changes affect the secondary processes of ion interaction with material.
|Number of pages||3|
|Journal||Fizika i Khimiya Obrabotki Materialov|
|Publication status||Published - May 1991|
ASJC Scopus subject areas
- Materials Science(all)