Effect of metal defect structure on interstitial ion distribution profile

V. I. Bojko, B. E. Kadlubovich, I. V. Shamanin

Research output: Contribution to journalArticlepeer-review

Abstract

Numerical simulation technique was applied to study the effect of Al defect structure on 1 MeV energy H+ and C6+ ions location upon irradiation. Concentrations of 1010-1012 cm-3 and volume defect size from 0.1 to 0.5 μm are considered. It is shown that volume defects in Al give rise to an increase in projectile ranges, distortion of implanted ion profiles and decrease in the energy release density. These changes affect the secondary processes of ion interaction with material.

Original languageEnglish
Pages (from-to)27-29
Number of pages3
JournalFizika i Khimiya Obrabotki Materialov
Issue number3
Publication statusPublished - May 1991

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Effect of metal defect structure on interstitial ion distribution profile'. Together they form a unique fingerprint.

Cite this