Effect of metal defect structure on interstitial ion distribution profile

Abstract

Numerical simulation technique was applied to study the effect of Al defect structure on 1 MeV energy H⁺ and C⁶⁺ ions location upon irradiation. Concentrations of 10¹⁰-10¹² cm^-3 and volume defect size from 0.1 to 0.5 μm are considered. It is shown that volume defects in Al give rise to an increase in projectile ranges, distortion of implanted ion profiles and decrease in the energy release density. These changes affect the secondary processes of ion interaction with material.

Original language	English
Pages (from-to)	27-29
Number of pages	3
Journal	Fizika i Khimiya Obrabotki Materialov
Issue number	3
Publication status	Published - May 1991

ASJC Scopus subject areas

Materials Science(all)

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title = "Effect of metal defect structure on interstitial ion distribution profile",

abstract = "Numerical simulation technique was applied to study the effect of Al defect structure on 1 MeV energy H+ and C6+ ions location upon irradiation. Concentrations of 1010-1012 cm-3 and volume defect size from 0.1 to 0.5 μm are considered. It is shown that volume defects in Al give rise to an increase in projectile ranges, distortion of implanted ion profiles and decrease in the energy release density. These changes affect the secondary processes of ion interaction with material.",

author = "Bojko, {V. I.} and Kadlubovich, {B. E.} and Shamanin, {I. V.}",

year = "1991",

month = may,

language = "English",

pages = "27--29",

journal = "Fizika i Khimiya Obrabotki Materialov",

issn = "0015-3214",

publisher = "Izdatel'stvo Nauka",

number = "3",

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T1 - Effect of metal defect structure on interstitial ion distribution profile

AU - Bojko, V. I.

AU - Kadlubovich, B. E.

AU - Shamanin, I. V.

PY - 1991/5

Y1 - 1991/5

N2 - Numerical simulation technique was applied to study the effect of Al defect structure on 1 MeV energy H+ and C6+ ions location upon irradiation. Concentrations of 1010-1012 cm-3 and volume defect size from 0.1 to 0.5 μm are considered. It is shown that volume defects in Al give rise to an increase in projectile ranges, distortion of implanted ion profiles and decrease in the energy release density. These changes affect the secondary processes of ion interaction with material.

AB - Numerical simulation technique was applied to study the effect of Al defect structure on 1 MeV energy H+ and C6+ ions location upon irradiation. Concentrations of 1010-1012 cm-3 and volume defect size from 0.1 to 0.5 μm are considered. It is shown that volume defects in Al give rise to an increase in projectile ranges, distortion of implanted ion profiles and decrease in the energy release density. These changes affect the secondary processes of ion interaction with material.

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JO - Fizika i Khimiya Obrabotki Materialov

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