Abstract
Numerical simulation technique was applied to study the effect of Al defect structure on 1 MeV energy H+ and C6+ ions location upon irradiation. Concentrations of 1010-1012 cm-3 and volume defect size from 0.1 to 0.5 μm are considered. It is shown that volume defects in Al give rise to an increase in projectile ranges, distortion of implanted ion profiles and decrease in the energy release density. These changes affect the secondary processes of ion interaction with material.
| Original language | English |
|---|---|
| Pages (from-to) | 27-29 |
| Number of pages | 3 |
| Journal | Fizika i Khimiya Obrabotki Materialov |
| Issue number | 3 |
| Publication status | Published - May 1991 |
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ASJC Scopus subject areas
- Materials Science(all)
Cite this
Bojko, V. I., Kadlubovich, B. E., & Shamanin, I. V. (1991). Effect of metal defect structure on interstitial ion distribution profile. Fizika i Khimiya Obrabotki Materialov, (3), 27-29.