Effect of layer-by-layer electrostatic assemblies on the surface potential and current voltage characteristic of metal-insulator-semiconductor structures

D. A. Gorin, A. M. Yashchenok, A. O. Manturov, T. A. Kolesnikova, H. Möhwald

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In the present Article, the Kelvin probe method for surface potential measurement is introduced to study polyelectrolyte multilayer coatings deposited on silicon plates. Metal-insulator-semiconductor (MIS) structures with polyelectrolyte layers as insulator were fabricated. The polyelectrolyte layer deposition on the surface of silicon plates led to a change of the current-voltage characteristics connected with resistance changes of the MIS structures. Poly(ethylenimine) (PEI) monolayer formation resulted in resistance decrease, and the following increase of the polyelectrolyte layer number led to MIS structure resistance increase. The results are interpreted as an interplay between accumulation of majority carriers (electrons) near the semiconductor surface and resistance increase due to insulating polyelectrolyte adsorption, and both effects can be discriminated by varying the polyelectrolyte layer thickness.

Original languageEnglish
Pages (from-to)12529-12534
Number of pages6
JournalLangmuir
Volume25
Issue number21
DOIs
Publication statusPublished - 3 Nov 2009
Externally publishedYes

Fingerprint

Surface potential
MIS (semiconductors)
Current voltage characteristics
Polyelectrolytes
assemblies
Electrostatics
Metals
electrostatics
Semiconductor materials
electric potential
Silicon
majority carriers
silicon
Polyetherimides
insulators
coatings
adsorption
Monolayers
Multilayers
Adsorption

ASJC Scopus subject areas

  • Electrochemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science(all)
  • Spectroscopy

Cite this

Effect of layer-by-layer electrostatic assemblies on the surface potential and current voltage characteristic of metal-insulator-semiconductor structures. / Gorin, D. A.; Yashchenok, A. M.; Manturov, A. O.; Kolesnikova, T. A.; Möhwald, H.

In: Langmuir, Vol. 25, No. 21, 03.11.2009, p. 12529-12534.

Research output: Contribution to journalArticle

Gorin, D. A. ; Yashchenok, A. M. ; Manturov, A. O. ; Kolesnikova, T. A. ; Möhwald, H. / Effect of layer-by-layer electrostatic assemblies on the surface potential and current voltage characteristic of metal-insulator-semiconductor structures. In: Langmuir. 2009 ; Vol. 25, No. 21. pp. 12529-12534.
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