Abstract
The influence of MgO impurity on efficiency of conducting layers formation in LiNbO3 crystals by ion bombardment was investigated. Pure LiNbO3 (LN) and MgO:LiNbO3(MLN) single crystals were irradiated by Ar+ions with energy 150 keV and fluence 1016 ions/cm2. Ion irradiation results in increase of surface conductivity of LiNbO3 crystals of all the investigated compositions more than by 6 orders. The opportunity of optical and electric properties change of LN by heat treatment in oxidation-reduction conditions was established. It is revealed, that there is a critical concentration of impurity [Mg]C 5-6 mol % when physical properties of lithium niobate significantly are changed. The conductivity of ion-irradiated layer of LN and MLN crystals has electronic character. The basic mechanism of charge transfer in LiNbO3 crystals with [Mg] < [Mg]C is the hopping of charge carriers on the localized states. In crystals with [Mg] > [Mg]C the conductivity is connected probably with carriers exited in nonlocalized states.
| Original language | English |
|---|---|
| Pages (from-to) | 94-96 |
| Number of pages | 3 |
| Journal | Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya |
| Issue number | 8 |
| Publication status | Published - 2005 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Mechanical Engineering
Cite this
Effect of ion irradiation on electrical properties of lithium niobate single crystals doped by MgO. / Bulycheva, A. A.; Pichugin, V. F.
In: Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, No. 8, 2005, p. 94-96.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of ion irradiation on electrical properties of lithium niobate single crystals doped by MgO
AU - Bulycheva, A. A.
AU - Pichugin, V. F.
PY - 2005
Y1 - 2005
N2 - The influence of MgO impurity on efficiency of conducting layers formation in LiNbO3 crystals by ion bombardment was investigated. Pure LiNbO3 (LN) and MgO:LiNbO3(MLN) single crystals were irradiated by Ar+ions with energy 150 keV and fluence 1016 ions/cm2. Ion irradiation results in increase of surface conductivity of LiNbO3 crystals of all the investigated compositions more than by 6 orders. The opportunity of optical and electric properties change of LN by heat treatment in oxidation-reduction conditions was established. It is revealed, that there is a critical concentration of impurity [Mg]C 5-6 mol % when physical properties of lithium niobate significantly are changed. The conductivity of ion-irradiated layer of LN and MLN crystals has electronic character. The basic mechanism of charge transfer in LiNbO3 crystals with [Mg] < [Mg]C is the hopping of charge carriers on the localized states. In crystals with [Mg] > [Mg]C the conductivity is connected probably with carriers exited in nonlocalized states.
AB - The influence of MgO impurity on efficiency of conducting layers formation in LiNbO3 crystals by ion bombardment was investigated. Pure LiNbO3 (LN) and MgO:LiNbO3(MLN) single crystals were irradiated by Ar+ions with energy 150 keV and fluence 1016 ions/cm2. Ion irradiation results in increase of surface conductivity of LiNbO3 crystals of all the investigated compositions more than by 6 orders. The opportunity of optical and electric properties change of LN by heat treatment in oxidation-reduction conditions was established. It is revealed, that there is a critical concentration of impurity [Mg]C 5-6 mol % when physical properties of lithium niobate significantly are changed. The conductivity of ion-irradiated layer of LN and MLN crystals has electronic character. The basic mechanism of charge transfer in LiNbO3 crystals with [Mg] < [Mg]C is the hopping of charge carriers on the localized states. In crystals with [Mg] > [Mg]C the conductivity is connected probably with carriers exited in nonlocalized states.
UR - http://www.scopus.com/inward/record.url?scp=26844457214&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=26844457214&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:26844457214
SP - 94
EP - 96
JO - Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya
JF - Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya
SN - 0207-3528
IS - 8
ER -