Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films

Gennady Remnev, Jindrich Musil, Vladislav Tarbokov, Sergey Pavlov, Fedor Konusov, Ivan Egorov, Ruslan Gadirov, Alexander Kabyshev, Daniel Javdošňák, Sergey Zenkin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition.

Original languageEnglish
Pages (from-to)1075-1082
Number of pages8
JournalRadiation Effects and Defects in Solids
Volume173
Issue number11-12
DOIs
Publication statusPublished - 2 Dec 2018

Fingerprint

Boron carbide
boron carbides
Electron irradiation
electron irradiation
Ion bombardment
ion irradiation
Light absorption
optical absorption
Thin films
Defects
defects
thin films
Radiation
Electron transitions
radiation
calcium silicates
sodium silicates
Calcium silicate
Aluminum nitride
Steel

Keywords

  • absorption
  • localized states
  • nanocomposite film
  • pulsed ion implantation
  • Radiation defect

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films. / Remnev, Gennady; Musil, Jindrich; Tarbokov, Vladislav; Pavlov, Sergey; Konusov, Fedor; Egorov, Ivan; Gadirov, Ruslan; Kabyshev, Alexander; Javdošňák, Daniel; Zenkin, Sergey.

In: Radiation Effects and Defects in Solids, Vol. 173, No. 11-12, 02.12.2018, p. 1075-1082.

Research output: Contribution to journalArticle

@article{2227769c255a4acaac5ac3e7ba841852,
title = "Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films",
abstract = "The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition.",
keywords = "absorption, localized states, nanocomposite film, pulsed ion implantation, Radiation defect",
author = "Gennady Remnev and Jindrich Musil and Vladislav Tarbokov and Sergey Pavlov and Fedor Konusov and Ivan Egorov and Ruslan Gadirov and Alexander Kabyshev and Daniel Javdošň{\'a}k and Sergey Zenkin",
year = "2018",
month = "12",
day = "2",
doi = "10.1080/10420150.2018.1539732",
language = "English",
volume = "173",
pages = "1075--1082",
journal = "Radiation Effects and Defects in Solids",
issn = "1042-0150",
publisher = "Taylor and Francis Ltd.",
number = "11-12",

}

TY - JOUR

T1 - Effect of intense electron and ion irradiation on optical absorption of boron carbide thin films

AU - Remnev, Gennady

AU - Musil, Jindrich

AU - Tarbokov, Vladislav

AU - Pavlov, Sergey

AU - Konusov, Fedor

AU - Egorov, Ivan

AU - Gadirov, Ruslan

AU - Kabyshev, Alexander

AU - Javdošňák, Daniel

AU - Zenkin, Sergey

PY - 2018/12/2

Y1 - 2018/12/2

N2 - The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition.

AB - The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition.

KW - absorption

KW - localized states

KW - nanocomposite film

KW - pulsed ion implantation

KW - Radiation defect

UR - http://www.scopus.com/inward/record.url?scp=85056813928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056813928&partnerID=8YFLogxK

U2 - 10.1080/10420150.2018.1539732

DO - 10.1080/10420150.2018.1539732

M3 - Article

VL - 173

SP - 1075

EP - 1082

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

SN - 1042-0150

IS - 11-12

ER -