Effect of hydrogen on reactive sputtering of transparent oxide films

Research School of High-Energy Physics

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Abstract

The article reports on the effect of addition of H₂ into a mixture of Ar + O₂ on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO₂, (iii) Ti-Y-O, and (iv) ZrO₂ films. It was found that the addition of H₂ into Ar + O₂ sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage U_d, (ii) strong change of the dependence p_O2 = f(fØ_O2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here p_O2 and Ø₂ are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.

Original language	English
Journal	Plasma Processes and Polymers
Volume	4
Issue number	SUPPL.1
DOIs	https://doi.org/10.1002/ppap.200730901
Publication status	Published - 1 Dec 2007

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Keywords

Coatings
Conductive transparent oxides
Dc reactive magnetron sputtering
Electrical conductivity
Films
Indium tin oxide (ITO)
Optical coatings

ASJC Scopus subject areas

Condensed Matter Physics
Polymers and Plastics

Cite this

Ondok, V., & Musil, J. (2007). Effect of hydrogen on reactive sputtering of transparent oxide films. Plasma Processes and Polymers, 4(SUPPL.1). https://doi.org/10.1002/ppap.200730901

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abstract = "The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(f{\O}O2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and {\O}2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.",

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AU - Musil, Jindřich

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N2 - The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.

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Access to Document

10.1002/ppap.200730901