Effect of hydrogen on reactive sputtering of transparent oxide films

Abstract

The article reports on the effect of addition of H₂ into a mixture of Ar + O₂ on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO₂, (iii) Ti-Y-O, and (iv) ZrO₂ films. It was found that the addition of H₂ into Ar + O₂ sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage U_d, (ii) strong change of the dependence p_O2 = f(fØ_O2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here p_O2 and Ø₂ are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.

Original language	English
Journal	Plasma Processes and Polymers
Volume	4
Issue number	SUPPL.1
DOIs	https://doi.org/10.1002/ppap.200730901
Publication status	Published - 1 Dec 2007

Keywords

Coatings
Conductive transparent oxides
Dc reactive magnetron sputtering
Electrical conductivity
Films
Indium tin oxide (ITO)
Optical coatings

ASJC Scopus subject areas

Condensed Matter Physics
Polymers and Plastics

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10.1002/ppap.200730901

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Ondok, V., & Musil, J. (2007). Effect of hydrogen on reactive sputtering of transparent oxide films. Plasma Processes and Polymers, 4(SUPPL.1). https://doi.org/10.1002/ppap.200730901

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abstract = "The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(f{\O}O2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and {\O}2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.",

keywords = "Coatings, Conductive transparent oxides, Dc reactive magnetron sputtering, Electrical conductivity, Films, Indium tin oxide (ITO), Optical coatings",

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AU - Ondok, Václav

AU - Musil, Jindřich

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N2 - The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.

AB - The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.

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