Effect of hydrogen on reactive sputtering of transparent oxide films

Václav Ondok, Jindřich Musil

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.

Original languageEnglish
JournalPlasma Processes and Polymers
Volume4
Issue numberSUPPL.1
DOIs
Publication statusPublished - 1 Dec 2007

Fingerprint

Reactive sputtering
Oxide films
oxide films
Hydrogen
sputtering
electrical resistivity
hydrogen
ITO (semiconductors)
Gas mixtures
Partial pressure
Magnetron sputtering
Oxides
Sputtering
partial pressure
gas mixtures
magnetron sputtering
flow velocity
Flow rate
Oxygen
oxides

Keywords

  • Coatings
  • Conductive transparent oxides
  • Dc reactive magnetron sputtering
  • Electrical conductivity
  • Films
  • Indium tin oxide (ITO)
  • Optical coatings

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Polymers and Plastics

Cite this

Effect of hydrogen on reactive sputtering of transparent oxide films. / Ondok, Václav; Musil, Jindřich.

In: Plasma Processes and Polymers, Vol. 4, No. SUPPL.1, 01.12.2007.

Research output: Contribution to journalArticle

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