Abstract
The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.
Original language | English |
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Journal | Plasma Processes and Polymers |
Volume | 4 |
Issue number | SUPPL.1 |
DOIs | |
Publication status | Published - 1 Dec 2007 |
Keywords
- Coatings
- Conductive transparent oxides
- Dc reactive magnetron sputtering
- Electrical conductivity
- Films
- Indium tin oxide (ITO)
- Optical coatings
ASJC Scopus subject areas
- Condensed Matter Physics
- Polymers and Plastics