Effect of hydrogen on reactive sputtering of transparent oxide films

Václav Ondok, Jindřich Musil

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.

Original languageEnglish
JournalPlasma Processes and Polymers
Issue numberSUPPL.1
Publication statusPublished - 1 Dec 2007


  • Coatings
  • Conductive transparent oxides
  • Dc reactive magnetron sputtering
  • Electrical conductivity
  • Films
  • Indium tin oxide (ITO)
  • Optical coatings

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Polymers and Plastics

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