Abstract
The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.
| Original language | English |
|---|---|
| Journal | Plasma Processes and Polymers |
| Volume | 4 |
| Issue number | SUPPL.1 |
| DOIs | |
| Publication status | Published - 1 Dec 2007 |
Fingerprint
Keywords
- Coatings
- Conductive transparent oxides
- Dc reactive magnetron sputtering
- Electrical conductivity
- Films
- Indium tin oxide (ITO)
- Optical coatings
ASJC Scopus subject areas
- Condensed Matter Physics
- Polymers and Plastics
Cite this
Effect of hydrogen on reactive sputtering of transparent oxide films. / Ondok, Václav; Musil, Jindřich.
In: Plasma Processes and Polymers, Vol. 4, No. SUPPL.1, 01.12.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of hydrogen on reactive sputtering of transparent oxide films
AU - Ondok, Václav
AU - Musil, Jindřich
PY - 2007/12/1
Y1 - 2007/12/1
N2 - The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.
AB - The article reports on the effect of addition of H2 into a mixture of Ar + O2 on the process of dc reactive magnetron sputtering of oxides and the electrical conductivity of transparent oxide films. Four systems were investigated: (i) In-Sn-O (ITO), (ii) TiO2, (iii) Ti-Y-O, and (iv) ZrO2 films. It was found that the addition of H2 into Ar + O2 sputtering gas mixture results in: (i) decrease in the magnetron discharge voltage Ud, (ii) strong change of the dependence pO2 = f(fØO2), and (iii) dramatic decrease of the electrical resistivity of sputtered transparent oxide films; here pO2 and Ø2 are the partial pressure and flow rate of oxygen, respectively. These results are described in detail.
KW - Coatings
KW - Conductive transparent oxides
KW - Dc reactive magnetron sputtering
KW - Electrical conductivity
KW - Films
KW - Indium tin oxide (ITO)
KW - Optical coatings
UR - http://www.scopus.com/inward/record.url?scp=70349428514&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349428514&partnerID=8YFLogxK
U2 - 10.1002/ppap.200730901
DO - 10.1002/ppap.200730901
M3 - Article
AN - SCOPUS:70349428514
VL - 4
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
SN - 1612-8850
IS - SUPPL.1
ER -