Étude de l'effet du vieillissement de la couche de métallisation de composants de puissance à semi-conducteur

Translated title of the contribution: Effect of die metallization layer ageing in the case of power semiconductor devices

Sylvain Pietranico, Sylvie Pommier, Stéphane Lefebvre, Mounira Berkani, Khatir Zoubir, Serge Bontemps, Emmanuel Cadel

Research output: Contribution to journalArticle

Abstract

The paper describes ageing mechanisms of the metallization layer deposited on the chips of power semiconductor devices, and the effects of its ageing on the electrical characteristics of a COOLMOSTM Transistor. We have tried to link the changes in electrical performances to the metallization degradation, in order to better understand the origin of the physical mechanisms of ageing and the effects of the degradation of the metallization layer on electrical performances of tested devices.

Translated title of the contributionEffect of die metallization layer ageing in the case of power semiconductor devices
Original languageFrench
Pages (from-to)569-585
Number of pages17
JournalEuropean Journal of Electrical Engineering
Volume14
Issue number5
DOIs
Publication statusPublished - 1 Dec 2011
Externally publishedYes

Keywords

  • Aging
  • Metallization
  • Power semiconductor devices
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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