Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method

A. S. Grenadyorov, K. V. Oskomov, Solovyev

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.

Original languageEnglish
Pages (from-to)107-116
Number of pages10
JournalOptik
Volume172
DOIs
Publication statusPublished - 1 Nov 2018

Fingerprint

Chemical vapor deposition
Optical properties
vapor deposition
Plasmas
optical properties
Argon
Optical band gaps
Wavelength
Substrates
Optical instruments
argon
wavelengths
Graphite
Film growth
Ion bombardment
pulses
Hydrogen
Solar cells
optical spectrum
bombardment

Keywords

  • Ar pressure
  • Optical band gap
  • Substrate bias
  • Transmission
  • Urbach energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method. / Grenadyorov, A. S.; Oskomov, K. V.; Solovyev.

In: Optik, Vol. 172, 01.11.2018, p. 107-116.

Research output: Contribution to journalArticle

@article{3bf879a6f9ee4f1fb7f26427854349a5,
title = "Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method",
abstract = "The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89{\%}, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35{\%} to 39{\%}, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.",
keywords = "Ar pressure, Optical band gap, Substrate bias, Transmission, Urbach energy",
author = "Grenadyorov, {A. S.} and Oskomov, {K. V.} and Solovyev",
year = "2018",
month = "11",
day = "1",
doi = "10.1016/j.ijleo.2018.07.024",
language = "English",
volume = "172",
pages = "107--116",
journal = "Optik",
issn = "0030-4026",
publisher = "Urban und Fischer Verlag Jena",

}

TY - JOUR

T1 - Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method

AU - Grenadyorov, A. S.

AU - Oskomov, K. V.

AU - Solovyev, null

PY - 2018/11/1

Y1 - 2018/11/1

N2 - The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.

AB - The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.

KW - Ar pressure

KW - Optical band gap

KW - Substrate bias

KW - Transmission

KW - Urbach energy

UR - http://www.scopus.com/inward/record.url?scp=85049559932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049559932&partnerID=8YFLogxK

U2 - 10.1016/j.ijleo.2018.07.024

DO - 10.1016/j.ijleo.2018.07.024

M3 - Article

AN - SCOPUS:85049559932

VL - 172

SP - 107

EP - 116

JO - Optik

JF - Optik

SN - 0030-4026

ER -