Abstract
The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.
| Original language | English |
|---|---|
| Pages (from-to) | 107-116 |
| Number of pages | 10 |
| Journal | Optik |
| Volume | 172 |
| DOIs | |
| Publication status | Published - 1 Nov 2018 |
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Keywords
- Ar pressure
- Optical band gap
- Substrate bias
- Transmission
- Urbach energy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method. / Grenadyorov, A. S.; Oskomov, K. V.; Solovyev.
In: Optik, Vol. 172, 01.11.2018, p. 107-116.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method
AU - Grenadyorov, A. S.
AU - Oskomov, K. V.
AU - Solovyev, null
PY - 2018/11/1
Y1 - 2018/11/1
N2 - The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.
AB - The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300–800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380–780 nm is 69–89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.
KW - Ar pressure
KW - Optical band gap
KW - Substrate bias
KW - Transmission
KW - Urbach energy
UR - http://www.scopus.com/inward/record.url?scp=85049559932&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85049559932&partnerID=8YFLogxK
U2 - 10.1016/j.ijleo.2018.07.024
DO - 10.1016/j.ijleo.2018.07.024
M3 - Article
VL - 172
SP - 107
EP - 116
JO - Optik
JF - Optik
SN - 0030-4026
ER -