Effect of defects in the structure of the metal on the form of distribution of implanted ions

Abstract

The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H⁺ and C⁸⁺ ions with an energy of up to 1 MeV. Concentrations of 10¹⁰-10¹² cm³ and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.

Original language	English
Pages (from-to)	241-243
Number of pages	3
Journal	Physics and chemistry of materials treatment
Volume	25
Issue number	3
Publication status	Published - May 1991

ASJC Scopus subject areas

Engineering(all)

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title = "Effect of defects in the structure of the metal on the form of distribution of implanted ions",

abstract = "The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H+ and C8+ ions with an energy of up to 1 MeV. Concentrations of 1010-1012 cm3 and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.",

author = "Boiko, {V. I.} and Kodlubovich, {B. E.} and Shamanin, {I. V.}",

year = "1991",

month = may,

language = "English",

volume = "25",

pages = "241--243",

journal = "Physics and chemistry of materials treatment",

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AU - Boiko, V. I.

AU - Kodlubovich, B. E.

AU - Shamanin, I. V.

PY - 1991/5

Y1 - 1991/5

N2 - The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H+ and C8+ ions with an energy of up to 1 MeV. Concentrations of 1010-1012 cm3 and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.

AB - The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H+ and C8+ ions with an energy of up to 1 MeV. Concentrations of 1010-1012 cm3 and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.

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M3 - Article

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JO - Physics and chemistry of materials treatment

JF - Physics and chemistry of materials treatment

SN - 0264-729X

IS - 3

ER -

Effect of defects in the structure of the metal on the form of distribution of implanted ions

Abstract

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