Abstract
The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H+ and C8+ ions with an energy of up to 1 MeV. Concentrations of 1010-1012 cm3 and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.
| Original language | English |
|---|---|
| Pages (from-to) | 241-243 |
| Number of pages | 3 |
| Journal | Physics and chemistry of materials treatment |
| Volume | 25 |
| Issue number | 3 |
| Publication status | Published - May 1991 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Boiko, V. I., Kodlubovich, B. E., & Shamanin, I. V. (1991). Effect of defects in the structure of the metal on the form of distribution of implanted ions. Physics and chemistry of materials treatment, 25(3), 241-243.