Effect of defects in the structure of the metal on the form of distribution of implanted ions

V. I. Boiko, B. E. Kodlubovich, I. V. Shamanin

Research output: Contribution to journalArticle

1 Citation (Scopus)


The numerical simulation method was used to examine the effect of defects in the structure of Al on localisation of H+ and C8+ ions with an energy of up to 1 MeV. Concentrations of 1010-1012 cm3 and dimensions of three-dimensional defects from 0.1 to 0.5 μm, typical of metals and alloys were examined. A large increase (several tenths of per cent) of the path, distortion of the profile of implanted ions, and a reduction of the density of ion generation were recorded. This affects the secondary processes accompanying the interaction between ions and matter.

Original languageEnglish
Pages (from-to)241-243
Number of pages3
JournalPhysics and chemistry of materials treatment
Issue number3
Publication statusPublished - May 1991


ASJC Scopus subject areas

  • Engineering(all)

Cite this