Effect of critical energy under planar channeling of an electron beam

Abstract

A planar channeling in transmission of the electrons with energy from 1.5 to 5.7 MeV through Si crystals is studied. A new method for determining a critical energy E_c is proposed. The value E_c corresponds to the touch of two near-barrier bands in the transverse energy spectrum of channeled electrons.

Original language	English
Pages (from-to)	219-221
Number of pages	3
Journal	Physics Letters A
Volume	125
Issue number	4
DOIs	https://doi.org/10.1016/0375-9601(87)90102-2
Publication status	Published - 9 Nov 1987

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1016/0375-9601(87)90102-2

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Gridnev, V. I., Kaplin, V. V., Khlabutin, V. G., Rozum, E. I., & Vorobiev, S. A. (1987). Effect of critical energy under planar channeling of an electron beam. Physics Letters A, 125(4), 219-221. https://doi.org/10.1016/0375-9601(87)90102-2

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title = "Effect of critical energy under planar channeling of an electron beam",

abstract = "A planar channeling in transmission of the electrons with energy from 1.5 to 5.7 MeV through Si crystals is studied. A new method for determining a critical energy Ec is proposed. The value Ec corresponds to the touch of two near-barrier bands in the transverse energy spectrum of channeled electrons.",

author = "Gridnev, {V. I.} and Kaplin, {V. V.} and Khlabutin, {V. G.} and Rozum, {E. I.} and Vorobiev, {S. A.}",

year = "1987",

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T1 - Effect of critical energy under planar channeling of an electron beam

AU - Gridnev, V. I.

AU - Kaplin, V. V.

AU - Khlabutin, V. G.

AU - Rozum, E. I.

AU - Vorobiev, S. A.

PY - 1987/11/9

Y1 - 1987/11/9

N2 - A planar channeling in transmission of the electrons with energy from 1.5 to 5.7 MeV through Si crystals is studied. A new method for determining a critical energy Ec is proposed. The value Ec corresponds to the touch of two near-barrier bands in the transverse energy spectrum of channeled electrons.

AB - A planar channeling in transmission of the electrons with energy from 1.5 to 5.7 MeV through Si crystals is studied. A new method for determining a critical energy Ec is proposed. The value Ec corresponds to the touch of two near-barrier bands in the transverse energy spectrum of channeled electrons.

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