Effect in GaAs produced by fast neutrons and protons

Abstract

It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.

Original language	English
Title of host publication	2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479971022
DOIs	https://doi.org/10.1109/SIBCON.2015.7147220
Publication status	Published - 1 Jul 2015
Event	2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Russian Federation Duration: 21 May 2015 → 23 May 2015

Conference

Conference	2015 International Siberian Conference on Control and Communications, SIBCON 2015
Country	Russian Federation
City	Omsk
Period	21.5.15 → 23.5.15

Keywords

DLTS spectr
GaAs
neutron
proton
Schottky barrier

ASJC Scopus subject areas

Computer Networks and Communications
Control and Systems Engineering

Access to Document

10.1109/SIBCON.2015.7147220

Fingerprint Dive into the research topics of 'Effect in GaAs produced by fast neutrons and protons'. Together they form a unique fingerprint.

Cite this

Soboleva, EG, Litvinenko, VV & Krit, TB 2015, Effect in GaAs produced by fast neutrons and protons. in 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings., 7147220, Institute of Electrical and Electronics Engineers Inc., 2015 International Siberian Conference on Control and Communications, SIBCON 2015, Omsk, Russian Federation, 21.5.15. https://doi.org/10.1109/SIBCON.2015.7147220

@inproceedings{26e0dd6102d846deb1f4b133a99f26e5,

title = "Effect in GaAs produced by fast neutrons and protons",

abstract = "It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.",

keywords = "DLTS spectr, GaAs, neutron, proton, Schottky barrier",

author = "Soboleva, {E. G.} and Litvinenko, {V. V.} and Krit, {T. B.}",

year = "2015",

month = jul,

day = "1",

doi = "10.1109/SIBCON.2015.7147220",

language = "English",

booktitle = "2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2015 International Siberian Conference on Control and Communications, SIBCON 2015 ; Conference date: 21-05-2015 Through 23-05-2015",

}

TY - GEN

T1 - Effect in GaAs produced by fast neutrons and protons

AU - Soboleva, E. G.

AU - Litvinenko, V. V.

AU - Krit, T. B.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.

AB - It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.

KW - DLTS spectr

KW - GaAs

KW - neutron

KW - proton

KW - Schottky barrier

UR - http://www.scopus.com/inward/record.url?scp=84941029104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941029104&partnerID=8YFLogxK

U2 - 10.1109/SIBCON.2015.7147220

DO - 10.1109/SIBCON.2015.7147220

M3 - Conference contribution

AN - SCOPUS:84941029104

BT - 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 International Siberian Conference on Control and Communications, SIBCON 2015

Y2 - 21 May 2015 through 23 May 2015

ER -