Effect in GaAs produced by fast neutrons and protons

E. G. Soboleva, V. V. Litvinenko, T. B. Krit

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.

Original languageEnglish
Title of host publication2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479971022
DOIs
Publication statusPublished - 1 Jul 2015
Event2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Russian Federation
Duration: 21 May 201523 May 2015

Conference

Conference2015 International Siberian Conference on Control and Communications, SIBCON 2015
CountryRussian Federation
CityOmsk
Period21.5.1523.5.15

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Keywords

  • DLTS spectr
  • GaAs
  • neutron
  • proton
  • Schottky barrier

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Control and Systems Engineering

Cite this

Soboleva, E. G., Litvinenko, V. V., & Krit, T. B. (2015). Effect in GaAs produced by fast neutrons and protons. In 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147220] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147220