Abstract
It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.
| Original language | English |
|---|---|
| Title of host publication | 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479971022 |
| DOIs | |
| Publication status | Published - 1 Jul 2015 |
| Event | 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Russian Federation Duration: 21 May 2015 → 23 May 2015 |
Conference
| Conference | 2015 International Siberian Conference on Control and Communications, SIBCON 2015 |
|---|---|
| Country | Russian Federation |
| City | Omsk |
| Period | 21.5.15 → 23.5.15 |
Keywords
- DLTS spectr
- GaAs
- neutron
- proton
- Schottky barrier
ASJC Scopus subject areas
- Computer Networks and Communications
- Control and Systems Engineering
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Cite this
Soboleva, E. G., Litvinenko, V. V., & Krit, T. B. (2015). Effect in GaAs produced by fast neutrons and protons. In 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147220] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147220