Effect in GaAs produced by fast neutrons and protons

E. G. Soboleva, V. V. Litvinenko, T. B. Krit

Division for Technosphere Safety

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.

Original language	English
Title of host publication	2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479971022
DOIs	https://doi.org/10.1109/SIBCON.2015.7147220
Publication status	Published - 1 Jul 2015
Event	2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Russian Federation Duration: 21 May 2015 → 23 May 2015

Conference

Conference	2015 International Siberian Conference on Control and Communications, SIBCON 2015
Country	Russian Federation
City	Omsk
Period	21.5.15 → 23.5.15

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Keywords

DLTS spectr
GaAs
neutron
proton
Schottky barrier

ASJC Scopus subject areas

Computer Networks and Communications
Control and Systems Engineering

Cite this

Soboleva, E. G., Litvinenko, V. V., & Krit, T. B. (2015). Effect in GaAs produced by fast neutrons and protons. In 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147220] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147220

Soboleva, EG, Litvinenko, VV & Krit, TB 2015, Effect in GaAs produced by fast neutrons and protons. in 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings., 7147220, Institute of Electrical and Electronics Engineers Inc., 2015 International Siberian Conference on Control and Communications, SIBCON 2015, Omsk, Russian Federation, 21.5.15. https://doi.org/10.1109/SIBCON.2015.7147220

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Access to Document

10.1109/SIBCON.2015.7147220