ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE.

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A transistorized measurement circuit has been developed which can be used in radiation defectoscopes and thickness meters which operate in an average-current mode. The circuit allows the resistance of the anode load of the photoelectron mutliplier to be increased to 10-50 G OMEGA . The input stage is implemented using a KP103 field-effect transistor. The drift of the circuit does not exceed 50 mV when the temperaturte varies in the 0 to plus 50 degree C range. A pointer meter or an automatic pen recorder may be used as the indicator. The current drawn does not exceed 1. 5 mA. The long-term drift at a temperature 20 plus or minus 5 degree C does not exceed plus or minus 5 mV per day.

Original languageEnglish
Title of host publicationInstrum Exp Tech
Pages1408-1410
Number of pages3
Volume16
Edition5 Part 1
Publication statusPublished - Sep 1973

Fingerprint

Scintillation
Semiconductor materials
Networks (circuits)
Field effect transistors
Photoelectrons
Anodes
Radiation
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kapranov, B. I. (1973). ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE. In Instrum Exp Tech (5 Part 1 ed., Vol. 16, pp. 1408-1410)

ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE. / Kapranov, B. I.

Instrum Exp Tech. Vol. 16 5 Part 1. ed. 1973. p. 1408-1410.

Research output: Chapter in Book/Report/Conference proceedingChapter

Kapranov, BI 1973, ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE. in Instrum Exp Tech. 5 Part 1 edn, vol. 16, pp. 1408-1410.
Kapranov BI. ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE. In Instrum Exp Tech. 5 Part 1 ed. Vol. 16. 1973. p. 1408-1410
Kapranov, B. I. / ECONOMICAL SEMICONDUCTOR MEASUREMENT CIRCUIT FOR A SCINTILLATION DEFECTOSCOPE. Instrum Exp Tech. Vol. 16 5 Part 1. ed. 1973. pp. 1408-1410
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