Dynamics of charge states and flux of relativistic U73+ ions in a Si crystal

O. E. Krivosheev, Yu L. Pivovarov, Yu M. Filimonov

    Research output: Contribution to journal › Article

    Abstract

    With the aim of more realistic description of the charge state dynamics and flux of relativistic ions U73+ in a silicon crystal is modified a model for studying features of Coulomb excitation of nuclei and ions in crystals. Numerically are constructed ion trajectories in a complex field of the continuous potential of many (>100) atomic chains. The estimations carried out show that for fast ions (V/c→1) in the channelling mode the processes of electron losses (pick up) do not play a significant part. The obtained results show also that the ion energy distributions before a crystal and after its transmission do not differ practically.

    Original languageEnglish
    Pages (from-to)81-83
    Number of pages3
    JournalPoverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya
    Issue number5
    Publication statusPublished - May 1995

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    Fluxes
    Crystals
    Ions
    Trajectories
    Silicon
    Electrons

    ASJC Scopus subject areas

    • Mechanical Engineering

    Cite this

    Dynamics of charge states and flux of relativistic U73+ ions in a Si crystal. / Krivosheev, O. E.; Pivovarov, Yu L.; Filimonov, Yu M.

    In: Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, No. 5, 05.1995, p. 81-83.

    Research output: Contribution to journal › Article

    Krivosheev, OE, Pivovarov, YL & Filimonov, YM 1995, 'Dynamics of charge states and flux of relativistic U73+ ions in a Si crystal', Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, no. 5, pp. 81-83.
    Krivosheev OE, Pivovarov YL, Filimonov YM. Dynamics of charge states and flux of relativistic U73+ ions in a Si crystal. Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya. 1995 May;(5):81-83.
    Krivosheev, O. E. ; Pivovarov, Yu L. ; Filimonov, Yu M. / Dynamics of charge states and flux of relativistic U73+ ions in a Si crystal. In: Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya. 1995 ; No. 5. pp. 81-83.
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